This document provides information on sputtering machines and sources from CFR Management and Administration. It describes several prototype sputtering machines, including ones for depositing transition metal nitrides, multilayer films, and films on roll-to-roll substrates or 3D samples. The machines vary in size and capabilities but generally include magnetrons, power supplies, vacuum systems, gas flow controls, and interfaces for automated control of deposition processes.

1. Sputtering Machines and Sources
catalogue

2. CFR Management and Administration
Founded in 1993, the Consorzio Ferrara Ricerche (CFR – Ferrara Research Consortium) is a non‐profit organisation
with public and private participation, aimed at the promotion, development and exploitation of human, scientific,
technological and economic resources mainly of the territory of Ferrara. The mission of CFR is to promote and to
manage research, innovation and technology transfer, by offering itself as a decisive and preferential partner for
universities, research centres, public institutions and industrial companies in Italy and abroad, besides acting as a
link between the generators of know‐how, industrial organisations and the working world.

3. CFR Technical Staff
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5. [ TRANSITION METAL NITRIDES ]
Sputtering Machine
This prototype is an easy and cheap solution to sputter small samples
to test and research new thin film coatings.
It is composed of two 2” DC planar magnetrons, and a 2” planar magnetron.
The deposition process is set and controlled through a touch screen panel.
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6.  Full automatic process: only one click to empty the chamber
 Automatic movement of sample holder and shutter
 8 different sputtering processes: single deposition, multilayer,
annealing, pre‐sputtering, manual deposition
 Possibility to control the system manually
 Automatic sample holder with 4 loading stages
 3 Sources for multilayer depositions
 Heater for the annealing process up on request
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7. The High Vacuum system is composed of:
 Stainless steel AISI 304 chamber (316 up on request)
 ISO and KF flanges
 Two doors for easy sample loading
 500 l/s turbo pump and rotary pump
 Three 100 sccm mass flow controller for Ar, N2 and other gases
 Two 2” DC planar magnetrons
 One 2” RF planar magnetron
 A Resistive Heater up on request
 Two DC power supplies
 One RF power supply
 Touch screen with customizable software to control and set all the machine processes
 Rotating sample holder with 4 plates and one shutter
Operative Specifications (Min value/Max Value):
 Power (0.2 kW / 25.0 kW)
 Samples diameter (max 50 mm, more up on request)
 Sample—shutter distance (10mm/ 100mm)
 Sputtering pressure range (3∙10‐3 / 5∙10‐2 mbar)
 Gas flow rate Ar and N2 (1.1 sccm / 100 sccm)
 Heater temperature (50 °C / 600 °C)
Physical Specifications
 Size: 2050mm (H) x 1343mm (W) x 1336mm (D)
 Weight ≈ 600 kg
[ TRANSITION METAL NITRIDES ]
Sputtering Machine
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8. 8

9. [ ROLL TO ROLL ]
Sputtering Machine
This UHV machine is designed for the deposition of getter films onto
alluminium ribbons 500 meters long for solar applications.
There are two 10” DC planar magnetrons of 12 kW total power in
roll to roll configuration.
The deposition process is controlled and set through touch screen panels
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10.  UHV system with conflat flanges and bakeout system (up to 250 °C)
for extremely clean deposition conditions: 1∙10‐9 mbar vacuum limit
 Completely closed machine: perfect for industrial applications
 Extractable roll to roll mechanism for fast and easy ribbon charging
 Full automatic process: only one click to empty the chamber
 Automatic control of the ribbon: draft and speed are monitored
by load cell and lasers and feedback controlled
 Rotating magnets for a uniform target erosion and low flakes production
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11. The Ultra High Vacuum system is composed by:
 Stainless steel AISI 304 chamber (AISI 316 up on request)
 200, 150, 100, 63, 35 Conflat flanges
 Fast entry flange to change the ribbon rapidly
 500 l/s turbo pump and rotary pump
 100 sccm Argon Mass flow controller
 Two 10” magnetrons with rotating magnets 12 kW total power
 Two DC 6 kW power supplies
 Touch screen with customizable software to control and set up all the machine processes
 Roll to roll system composed by 8 rolls
 2 lasers and a load cell (for diameter and ribbon draft measurement)
 8 zones baking system composed of 32 heater elements
Physical Specifications:
 Rack Size: 1900mm (H) x 1100mm (W) x 750mm (D)
 Deposition system size: 1700mm (H) x 6000mm (W) x 1500mm (D)
 Rack weight ≈ 200 kg
 Deposition system weight ≈ 2000 kg
[ ROLL TO ROLL ]
Operative Specifications (Min value/Max Value): Sputtering Machine
 Power (0.2 kW / 23.0 kW)
 Baking temperature (50°C /300°C)
 Pressure limit after baking process1 ( < 1∙10‐8)
 Sputtering pressure range1 (4∙10‐3 / 5∙10‐2 )
 Gas flow rate (1.1 sccm / 100 sccm)
 Ribbon thickness (25 µm / 50 µm )
 Ribbon lenght (25 µm: 20m/500m) (50 µm: 20m/250m)
 Ribbon speed (0.01 m/min / 2.00 m/min)
 Ribbon draft ‐read by load cell‐ (0.1 Kg (recommended 3 kg) / 9 kg (recommended 6 kg))
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This limit is without the ribbon inside the vacuum chamber.
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13. [ TITANIUM NITRIDE ]
Sputtering Machine
This UHV machine provides the deposition of Titanium Nitride films
onto 3D samples.
A sample holder with an epyciclide motion allows a uniform deposition
of the alumina cylinder.
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14.  Two facing 10“ magnetrons for uniform deposition on each side of the substrates
 Microbalance to know the film thickness during deposition process
 Dry pump to avoid back streaming contaminations
 Special sampleholder with RF contact for pre‐sputtering to clean the sample
surface
 Epycycloidal motion for uniform deposition
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15.
The High Vacuum system is composed of:
 Stainless steel AISI 304 chamber (AISI 316 up on request)
 100 l/s turbo pump and scroll pump
 100 sccm Argon, Nitrogen Mass flow controller
 Two 10” DC planar magnetrons 12 kW total power
 Two DC 6 kW power supplies
 A RF 1 kW power supply for plasma etching
 Rotating sample holder with RF contact for sample pre‐sputtering
 Magnetrons are mounted on rails for an easy movimentation
 Microbalance for thickness measurements
Operative Specifications (Min value/Max Value):
 Power (0.2 kW / 15.0 kW)
 Sputtering pressure range (3∙10‐3 / 5∙10‐2 mbar)
 Gas flow rate Ar and N2 (1.3 sccm / 100 sccm)
 Magnetron Power (max: 6 kW)
[ TITANIUM NITRIDE ]
Sputtering Machine
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17. [ MULTI‐CHAMBER ]
Sputtering Machine
This UHV machine provides the deposition of transition metal nitrides
and oxide coatings; multilayer and co‐sputtering depositions.
Two different deposition chambers allow two different sputtering
processes in the same vacuum process.
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18.  Two process chamber
 Cluster magnetron for multilayer film deposition
 Lift for easy access to the sputtering chamber
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19.
The High Vacuum system is composed by:
 Stainless steel AISI 304 chamber (AISI 316 up on request)
 Two process chamber
 100 l/s turbo pump and scroll pump
 100 sccm Ar, N2, O2 mass flow controller
 Six 2” DC planar magnetrons
 Rotating sampleholder
 Cluster with three 2” magnetrons
 Magnetron cluster mounted on automatic lift
Operative Specifications (Min value/Max Value):
 Power (0.2 kW / 25.0 kW)
 Sputtering pressure range (3∙10‐3 / 5∙10‐2 mbar)
 Gas flow rate Ar N2 and O2 (1.3 sccm / 100 sccm)
 Magnetron Power (max 1000 W, extendible up on request)
[ MULTI CHAMBER ]
Sputtering Machine
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21. [ YBCO ]
Sputtering Machine
A UHV machine for the deposition of YBCO superconductive films on strip samples
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22.
 The sputtering deposition is heater assisted for best results
 Rectangular Diode Magnetron for uniform thickness deposition
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23.
The High Vacuum system is composed of:
 Stainless steel AISI 304 chamber (AISI 316 up on request)
 Two doors for easy sample loading
 63 l/s turbo pump and scroll pump
 100 sccm Argon, Oxigen Mass flow controller
 Rectangular DC diode sputtering source 1kW max power
 Heater
Operative Specifications (Min value/Max Value):
 Pressure limit after vacuum process1 ( < 2∙10‐6 mbar)
 Sputtering pressure range (10‐1 / 10 mbar)
 Gas flow rate Ar and O2 (1.1 sccm / 100 sccm)
 Magnetron Power (100W / 1000W)
[ YBCO ]
Sputtering Machine
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This limit is without samples and other external objects inside the vacuum chamber.
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25. [ PLANAR MAGNETRON ]
Sputtering Sources
2”, 4”, 8”, 10” and 12” planar magnetron sputtering sources
with permanent magnets or solenoid
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26.  Target diameter from 2” to 12”
 Water cooled
 NdFeB magnets water free in 2” configuration
 DC or RF powered
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27. 2 / 4 inch Planar Magnetron Sputtering Source:
 Diameter: 2” (50,8 mm) /4” (101,6 mm)
 Target fixing: on copper baseplate by silver paint or metal eutectic
 Utilization: up to 30%
 Magnets: NdFeB, Solenoid up on request for 4” magnetron
(Balanced or Unbalanced Magnetic field confinement up on request)
 DC power (max): 1 kW / 2 kW
 RF power (max): 500 W / 1 kW
 Sputtering Current (max):
3 A / 6 A
 Sputtering voltage: 100‐1000V
 Sputtering pressure: 1∙10‐3 mbar to 0,1 mbar
 Mounting: CF100 flange / CF 150 flange
[ PLANAR MAGNETRON ]
Sputtering Sources
8 / 10 / 12 inch Planar Magnetron Sputtering Source:
 Diameter: 8” (203,2 mm) / 10” (240 mm) / 12” (304,8 mm)
 Target fixing: brazed on copper baseplate
 Utilization: up to 50%
 Magnets: Plastimag or NdFeB rotating magnets
 DC power (max): 3 / 4 / 6 kW
 RF power (max): 1,5 / 2 / 3 kW
 Sputtering voltage: 100‐1000V
 Sputtering pressure: 1∙10‐3 mbar to 0,1 mbar
 Mounting: ISO flange
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29. [ RECTANGULAR CATHODIC ARC ]
PVD Source
Rectangular Cathodic Arc with solenoid and magnetic filter
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30.  High deposition rate
 Excellent film adhesion
 Magnetic Filter: no macroparticles on deposited films
 Large deposition area
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31. Magnetic Filtered Source:
 Target area: 220 cm2
 Target fixing: directly on baseplate screwed or brazed
 Utilization: up to 60%
 Target magnetic confinement: 1 Solenoid
 Utilization mode: DC or pulsed DC
 Arc Current (max): 600 A
 Deposition Rate: 35 nm/s (target SnO2, measured at the filter exit)
 Mounting: Custom rectangular flange
 Filter: Macroparticles magnetic filter with 2 Solenoids
(the filter can be removed)
[ RECTANGULAR CATHODIC ARC]
PVD Source
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33. [ TRIPLE MAGNETRON CLUSTER ]
Sputtering Source
Triple magnetron cluster is the most suitable system
to deposit compounds starting from two or three different targets
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34.  Each magnetron is shuttered in order to deposit selectively from one or two
targets: in this way multilayer growth is possible
 Suitable for co‐deposition magnetron sputtering
 The three magnetrons are placed at 120 degree angle one to each other
in order to make the system axially symmetric
 NdFeB magnets water free
 DC or RF powered
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35. Cluster
 Mounting: CF200 flange
 Flanges: 3 CF100, 4 CF16
 Material: Stainless steel AISI 316L
2 inch Planar Magnetron Sputtering Sources
 Diameter: 2” (50,8 mm)
 Target fixing: on copper baseplate by silver paint or metal eutectic
 Utilization: up to 30%
 Magnets: NdFeB Balanced or Unbalanced Magnetic field confinement
 DC power (max): 1 kW
 RF power (max): 500 W
 Sputtering Current (max):
3 A
 Sputtering voltage: 100‐1000V
 Sputtering pressure: 1∙10‐3 mbar to 0,1 mbar
 Mounting: CF100 flange
 Electrical connector: Lemo type
[ TRIPLE MAGNETRON CLUSTER ]
Sputtering Sources
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37. [ RECTANGULAR MAGNETRON/DIODE ]
Sputtering Source
A cheap solution for strips and rectangular geometry
coatings that require high uniformity thickness
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38.  High percentage of target erosion
 Uniformity deposition in a wide square
 DC powered
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39.
Rectangular Diode Sputtering Sources
 Target size: 300 x 30 x 6 mm
 Target fixing: on copper baseplate by silver paint or metal eutectic
 Magnets: NdFeB Balanced Magnetic field confinement
 Utilization: up to 80% in diode mode
 DC power (max): 1 kW
 Sputtering Current (max):
3 A
 Sputtering voltage: 100‐1000V
 Sputtering pressure: 1∙10‐3 mbar to 0,1 mbar
 Mounting: CF100 flange
 Electrical connector: Lemo type
[ RECTANGULAR MAGNETRON/DIODE ]
Sputtering Sources
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41. [ STANDARD MAGNETRON ]
Sputtering Source
2” diameter planar magnetron with a high
magnetic field provided by permanent magnets
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42.  Water cooled
 Mounted on a CF 100 flange
 Variable target‐substrate distance
 A shutter for the target can be optionally mounted
 Works with any kind of conductive target
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43.
Rectangular Diode Sputtering Sources
 Diameter: 2” (50,8 mm)
 Target fixing: on copper baseplate by silver paint or metal eutectic
 Utilization: up to 30%
 Magnets: NdFeB Balanced or Unbalanced Magnetic field confinement
 DC power (max): 1 kW
 RF power (max): 500 W
 Sputtering Current (max):
3 A
 Sputtering voltage: 100‐1000V
 Sputtering pressure: 1∙10‐3 mbar to 0,1 mbar
 Mounting: CF100 flange
 Electrical connector: Lemo type
[ STANDARD MAGNETRON ]
Sputtering Sources
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45. [ CILINDRICAL MAGNETRONS FOR OIL INDUSTRIES ]
Hard coatings, protective layers, anti‐friction thin films,
for special pipes designed for oil industries.
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46.  Hard coating and protective and anti‐friction
thin films for metallic pipes
 Materials: DLC to transition metals carbides
 Strong permanent magnets internal (Fig. on the center)
or external (Fig. on the right)
 The cathode create a high plasma confinement along cylinder axis
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47.
Cylindrical Magnetrons
 Diameter: from 10 mm to 1000 mm
 Length: from 10 mm to 2000 mm
 Utilization: up to 80%
 Magnets: NdFeB permanent Magnets or solenoid
(Balanced Magnetic field confinement)
 DC power (max): function of dimension
 Sputtering Current (max):
function of dimension
 Sputtering voltage: 100‐1000V
 Sputtering pressure: 1∙10‐3 mbar to 0,1 mbar
 Mounting: CF, KF or custom designed flange
[ CYLINDRICAL MAGNETRONS FOR OIL INDUSTRIES ]
Sputtering Sources
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49. [ HEATERS ]
IR heater lamp for annealing process
and high temperature coating process
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50.  Cylindrical and rectangular geometry
 Mounted on a CF 100 flange
 Fast heating response
 Maximum temperature achievable 800°C
 Very low degassing rate during heating
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51.
Circular heater
 Sample Diameter (max): 2” (50,8 mm)
 Max temperature: 800 °C
 Power (max): 500 W
 Voltage: 230 V AC
 Working pressure: atmospheric pressure to 1∙10‐9 mbar
 Mounting: CF100 flange
 Termocouple: k type
Rectangular heater
 Sample size: 60 x 350 mm
 Max temperature: 800 °C
 Power (max): 4 kW
 Voltage: 230 V AC
 Working pressure: atmospheric pressure to 1∙10‐9 mbar
 Mounting: CF100 flange
 Termocouple: k type
[ HEATERS ]
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53. [ BAKING CONTROLLER ]
3 zone UHV Baking Control
 3 independent heating zones
 3.3 kW maximum power for each zone
 99 hours timer
 Thermoresistivity probe PT100 for temperature control
 Over‐temperature alarm
 Timer/manual operation mode
U.H.V. Baking Control is a complete and easy to use system
to control the baking processes in vacuum chambers
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55. [ contacts ]
Legnaro (PD) - Technical Facilities
Ferrara - Registered Office
e‐mail : info@surfacetreatments.it
web site: http://www.consorzioferrararicerche.it
http://www.surfacetreatments.org
Phone : +39 049‐8068321
Fax : +39 049‐8068817
Technical Facilities : Viale dell’Università 2, 35020 Legnaro (PD) ‐ Italy
Registered Office : Via Saragat 1, 44100 Ferrara ‐ Italy

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