Silicon on insulator22

1. MANUFACTURING PROCESS
OF
SOI TECHNOLOGY
USING
NANO CLEAVING
VIDYA BHARATHI INSTITUTE OF TECHNOLOGY
Presented by:
G.Anusha (III year)
N.Naresh (III year)

2.  Preamble
 Differences
Features
Manufacturing methods
 Nano cleaving
Applications
 Advantages
 Conclusion

3. PREAMBLE
SOI
•Operating speed
•Packaging density

4. DIFFERENCES

5. FEATURES:
HIGH SPEED
VERY LOW DC POWER
CONSUMPTION
SIGNIFICANT CROSS TALK
REDUCTION

6. MAKING SOI A PRODUCTION TECHNOLOGY:

7. NANO CLEAVE PROCESS:
Reduce cost.
Create SOI wafers with exceptional
material quality.
Wafer bonding steps are
accomplished at room temperature.
It is highly efficient for chip
makers.

8. NANO CLEAVE DONOR WAFER PROCESS FLOW

9. ADVANTAGES:
 20 to 30% higher operating speed
 Low operating voltage
 Absence of latch up
Increasing chip yield

10. APPLICATIONS:
•USE IN PHOTONICS
• IN HIGH PROCESSORS
• SMART SENSORS
• PORTABLE SYSTEMS

11. CONCLUSION:
Lowering the cost of SOI wafers.
Manufacturing process is at room
temperature.
SOI wafer can be used directly without
any edge treatment.

12. QUERIES???

13. THANK YOU !!!!!!