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Electrical Resistivity of Ferromagnetic Nickel RESISTIVITY (  ) is a material property,  independent of size of the sample DEPENDS ON TEMPERATURE CONDUCTIVITY(  )  :    = 1/     =  n e    ,     = v / E      = RA /  l   =  VA /   I  l I Methods of Measurement:  1. Two probe method :  for Insulators 2. Four Probe method :  for semiconductors and metals l A
   = 1/     =  n e     = n e 2     / m  ,    is mobility of the  charge carriers and n is the charge density    = v / E = e    / m  ,  v is velocity of the carriers     is relaxation time  or time interval between collisions    decreases with increase in  T , the temperature    and     depend on    and follow the variation in   (T) 1.  In metals :  T dependence of     is vital hence    plays an important role.    and hence    and     decrease with rise in  T 2.  In semiconductors  :  T dependence of  n  is vital n  =  n 0  exp( - E g  / K B  T) ,    =  n e    =   0  exp(- E g  / K B  T)   3. In insulators, E g  is large and hence n is small Formulae
Band Picture of Solids Band gap E g  is ~ 7 eV in Diamond ( Insulator ) ~ 1 ev in Semiconductors Zero in conductors Lennard-Jones  potential E(R) = -(A/R m  ) +(B/R n  ) At R = R 0   ,  d E/dR = 0
[object Object],[object Object],[object Object],N(E) = No. of states between E and E+dE F(E) = Probability that the state at E is occupied. N= ∑  N(E) F(E) dE K B T
 T Semiconductors Metals  ---  Phonon contribution is linear in T at high T Semiconductors Slope =  E g  / K B ,[object Object],[object Object],[object Object]
Four Probe Measurement Insulators  –  Two Probe Measurement Metals &  Semiconductors  Four Probe Measurement Block diagram for four-probe  conductivity measurement   An equivalent circuit for  four-probe method  
Pressure contacts  for  four-probe  technique. Four Probe Arrangement Four probe method is used to  minimize contribution from  contact resistances.  V s   +  =  + IR S  + V Th V s   -  =  - IR S  + V Th V s   +  - V s   -  =  2 IR S I =  (V R   +  - V R   -  ) /R V s   + +  V s   -  =  2 V Th V Th  is independent of the current direction Any local temperature gradients  between points 3 and 4 will  generate V Th
Heating the Sample : The sample is heated using a  furnace.  The furnace is made by winding a high resistive wire ( Nichrome ) on a muffle which gives out heat ( Joule heating ) as  i 2  r  when a  current i  is sent through the furnace wire whose resistance is  r. Thermal sensors/ Thermocouples : 1. Commonly used are Pt 100  Ω  resistor, or thermocouples There are different types of thermocouples appropriate to   sense the temperature at different  temperature ranges 2. Chromel- Alumel is the thermocouple used  for temps above RT up to 1200 0  C 3.  Works on the principle of Seebeck effect. 4.  Two junctions , one at O 0  C and the other  close to  the sample give differential emf. Corresponding temperature is read out  from a  calibration chart.
The sample resistance is computed as ( Ohm ) The resistivity    is computed as     = ( R S  A ) /  l Sources of Resistivity : 1. Impurities   2.  Phonons   3.  Magnons Separate the various contributions from   total   T  total  ph  o  mag   Correction of thermo emf  arising from local heating  0 RT
 
Analysis : ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

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4.electrical resistivity of ferromagnetic nickel

  • 1. Electrical Resistivity of Ferromagnetic Nickel RESISTIVITY (  ) is a material property, independent of size of the sample DEPENDS ON TEMPERATURE CONDUCTIVITY(  ) :  = 1/  = n e  ,  = v / E  = RA / l = VA / I l I Methods of Measurement: 1. Two probe method : for Insulators 2. Four Probe method : for semiconductors and metals l A
  • 2. = 1/  = n e  = n e 2  / m ,  is mobility of the charge carriers and n is the charge density  = v / E = e  / m , v is velocity of the carriers  is relaxation time or time interval between collisions  decreases with increase in T , the temperature  and  depend on  and follow the variation in  (T) 1. In metals : T dependence of  is vital hence  plays an important role.  and hence  and  decrease with rise in T 2. In semiconductors : T dependence of n is vital n = n 0 exp( - E g / K B T) ,  = n e  =  0 exp(- E g / K B T) 3. In insulators, E g is large and hence n is small Formulae
  • 3. Band Picture of Solids Band gap E g is ~ 7 eV in Diamond ( Insulator ) ~ 1 ev in Semiconductors Zero in conductors Lennard-Jones potential E(R) = -(A/R m ) +(B/R n ) At R = R 0 , d E/dR = 0
  • 4.
  • 5.
  • 6. Four Probe Measurement Insulators – Two Probe Measurement Metals & Semiconductors Four Probe Measurement Block diagram for four-probe conductivity measurement An equivalent circuit for four-probe method  
  • 7. Pressure contacts for four-probe technique. Four Probe Arrangement Four probe method is used to minimize contribution from contact resistances.  V s + = + IR S + V Th V s - = - IR S + V Th V s + - V s - = 2 IR S I = (V R + - V R - ) /R V s + + V s - = 2 V Th V Th is independent of the current direction Any local temperature gradients between points 3 and 4 will generate V Th
  • 8. Heating the Sample : The sample is heated using a furnace. The furnace is made by winding a high resistive wire ( Nichrome ) on a muffle which gives out heat ( Joule heating ) as i 2 r when a current i is sent through the furnace wire whose resistance is r. Thermal sensors/ Thermocouples : 1. Commonly used are Pt 100 Ω resistor, or thermocouples There are different types of thermocouples appropriate to sense the temperature at different temperature ranges 2. Chromel- Alumel is the thermocouple used for temps above RT up to 1200 0 C 3. Works on the principle of Seebeck effect. 4. Two junctions , one at O 0 C and the other close to the sample give differential emf. Corresponding temperature is read out from a calibration chart.
  • 9. The sample resistance is computed as ( Ohm ) The resistivity  is computed as  = ( R S A ) / l Sources of Resistivity : 1. Impurities 2. Phonons 3. Magnons Separate the various contributions from  total T  total  ph  o  mag Correction of thermo emf arising from local heating  0 RT
  • 10.  
  • 11.