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347 cu2 o solar cell (9)
1. SCHOOL OF ENGINEERING SCIENCE
SIMON FRASER UNIVERSITY
CANADA
Paintable CUPROUS OXIDE/ZINC
OXIDE Photovoltaic Device
M.Prasad and Ash M. Parameswaran
mpa56@sfu.ca
paramesw@sfu.ca
1
3. Background
•
•
•
•
1920s: Cu2O rectifier
1930s: Cu2O photosensitive device
1970s: Research on Cu2O photovoltaic cells
Reported efficiency 2%. At present: 20% [1,2]
• 1980s: Three main issues of Cu2O solar cells:
1. A sound method of preparation of Cu2O
2. Increasing the photoconductivity of Cu2O
3. Making a good P-N junction [3]
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SIMON FRASER UNIVERSITY
CANADA
4. Introduction
• Solar cells research - popular topic now
worldwide need for clean and renewable energy.
• Cu2O Benefits (p-type):
Availability & low cost to develop
Efficiency 20%
Band gap 2 eV[4]
• ZnO (n-type): easy to manufacture and low cost.[4]
The combination of Cu2O and ZnO
inexpensive photoconductive device.
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SIMON FRASER UNIVERSITY
CANADA
6. Device Preparation
Cu2O painting
1. Copper sheet : Clean and dry thoroughly
2. Prepare a colloidal suspension
3. Paint that suspension on Cu sheet.
4. Dry (5 min), wash with acetone and deionised water
5. Heat (50°C, 5min) to remove any moisture content
Now the material is ready for next step
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SIMON FRASER UNIVERSITY
CANADA
7. Device Preparation
Electrochemical deposition of ZnO:
• Using zinc Nitrate aq-solution (pH 12):
(Painted Cu2O sample and carbon
electrode)
• Bias current 3mA at 72°C for 5 hours
• Wash with deionised water and dry.
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SIMON FRASER UNIVERSITY
CANADA
8. Device Preparation
Bare Cu plate
The device preparation steps
Cu2O Painting
Electrical Connection:
2 pieces of wire (≈5cm)
connected to bare Cu and
ZnO using Nickel paint.
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ZnO deposition
Nickel contacts
SIMON FRASER UNIVERSITY
CANADA
9. Device Preparation
Cu2O painted side
Bare Cu Side
Photograph of the Cu2O painted on bare Cu sample
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SIMON FRASER UNIVERSITY
CANADA
11. Experimental Results
• Tested using “Agilent 4155C SPA”
under the Diode Characterization setting
• voltage sweep: -200mV to 200mV
• Dark vs illuminated
40% increase in current upon illumination
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SIMON FRASER UNIVERSITY
CANADA
12. Experimental Results
V-I response of the device
0.03
0.02
Current (A)
Dark Current
-0.2
0.01
0
-0.15
-0.1
-0.05
-0.01
0
0.05
0.1
0.15
0.2
-0.02
-0.03
Illuminated Current
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-0.04
Voltage (V)
SIMON FRASER UNIVERSITY
CANADA
13. Conclusion
• A simple approach to Cu/Cu2O-ZnO photovoltaic
device
• simple painting technique to create the interface
A proof concept: Paves an avenue for an
ultra-economical way to produce
photovoltaic devices in the future.
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SIMON FRASER UNIVERSITY
CANADA
14. References
1. Rakhshani, A.E., Solid-State
Electronics., 29, 7(1986)
2. Georgieva, V., Tanusevski, A., Georgieva, M., Sola
r Cells- Thin-Film
Technologies., L.A.Kosyachenko., Editor, p.55
INTECH (2011)
3. Olsen L.C., Addis, F.W., Miller.W., Solar Cells., 7
, 247 (1982-83)
4. Motoyoshi, R., Oku, T., Suzuki,A., Kikuchi, K., Ki
kuchi,S., Synthetic Metals., 160, 1219, (2010)
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SIMON FRASER UNIVERSITY
CANADA