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NANOELECTRONICS


      VISVESVARAYA TECHNOLOGICAL UNIVERSITY
                                      BELGAUM




                                  A SEMINAR REPORT ON

                              NANOELECTRONICS
      Submitted in partial fulfillment of the requirements for the award of the degree of
                            BACHELOR OF ENGINEERING
                                              IN
                     ELECTRONICS & COMMUNICATION




                                      SUBMITTED BY
                              DEEPU.P.V : 1BO08EC009


                      BRINDAVAN COLLEGE OF ENGINEERING
                           DWARAKANAGAR, BANGALORE

                                    MONTH AND 2012


DEPT OF ECE                                                                          BRCE
NANOELECTRONICS

                  BRINDAVAN COLLEGE OF ENGINEERING
              DWARAKANAGAR,YELAHANKA BANGALORE

                            ELECTRONICS & COMMUNICATION




                                           CERTIFICATE

Certified that seminar work entitled “ nanoelectronics ” is a bonafide work carried out in the eighth semester
by “ deepu. P.v ” in partial fulfillment for the award of bachelor of engineering in “ electronics &
communication ” from visvesvaraya technological university during the academic year 2011-2012, who
carried out the seminar work under the guidance and no part of this work has been submitted earlier for the
award of any degree




SIGNATURE                                                               SIGNATURE

V.K. GUPTA                                                              KEERTHI .N.V
SEMINAR CO-ORDINATOR                                                    INTERNAL GUIDE
SR. LECTURER                                                             LECTURER
DEPT OF ECE, BRCE                                                       DEPT OF ECE, BRCE


                                               SIGNATURE
                                         PROF G. VENKATESH
                                     HEAD OF THE DEPARTMENT
                                           DEPT OF ECE ,BRCE




DEPT OF ECE                                                                                       BRCE
NANOELECTRONICS




                                 * CONTENTS



   Abstract :           Nanoelectronics

   Chapter-1       :         Introductio To Nanotechnology

   Chapter-2       :         History Of Nanoelectronics

   Chapter-3       :         Nanotechnologies Impact On Electronics

   Chapter-4       :         How Can Nanotechnology Improve The Capabilities
              Of Electronic Components?

   Chapter-5       :         Contribution Of Nanoelectronics To The World

   Chapter-6       :         Advantages Of Nanoelectronics To The World

   Chapter-7       :         Applications Under Development

   Chapter-8       :         Bibilography




DEPT OF ECE                                                           BRCE
NANOELECTRONICS




                             List Of Tabels

      1. Table 4.1: Scaling Principles




                       List Of Figures

      1. Fig 1.1 : Matter On Atomic And Molecular Scale.
      2. Fig 2.1: Moore’s Law.
      3. Fig 3.1: Smart Microprocessor Based Computer
      4. Fig 4.1 :Scaling Principles
      5. Fig 4.2:Schematic Representation Of Gate –Dielectric Tunneling And
                   Direct Source-Drain Tunnelling
      6. Fig 4.3: E J-Mosfet
      7. Fig 4.4: Showing Resonant Tunnels
      8. Fig 5.1: Transistor
      9. Fig 5.2 : Nanofabrication
      10. Fig 5.3 Molecular Electronics
      11. Fig 5.4 : Nanoionics
      12. Fig 5.5 : Nanno Photonics
      13. Fig 5.6: Nanowire
      14. Fig 5.7: Next Generation Display Screens
      15. Fig 5.8 : Optics
      16. Fig 5.9 : Handheld Devices
      17. Fig 7.1 Transistors Built Using Carbon Nanotubes
      18. Fig 7.2 Schematic Of A Graphine Transistor
      19. Fig 7.3 : Mram


DEPT OF ECE                                                                   BRCE
NANOELECTRONICS




                                   NANOELECTRONICS

                                            ABSTRACT


Electronic industry is developing rapidly and tremendously over past few decades. Our traditional
microelectronic devices appear to be saturated for further miniaturization. Hence, new technologies are
developing vigorously. The range of nanotechnology and designs for nano electronic devices are discussed
in this paper. The paper also describes and compares in nonmathematical way, the operating principles,
advantages and status of new technologies that promise to continue miniaturization of computers to the scale
of few nanometers and ultimately to molecular scale. Devices having very small size and dimensions of only
few nanometers i.e (10 ^ -9m) are most promising alternatives for this problem. The research work is yet
going on to design .in this paper first, we will discuss about nanotechnology , nanotechnologies impact
electronics, history of nanoelectronics . Second, we will review architectures being developed for circuit-
level integration, hybrid crossbar/cmos circuits and array-based systems, including experimental
demonstrations of key concepts such lithography-independent, chemically coded stochastic demultipluxers.
These device structures show robust switching, promising performance metrics and the potential for terabit-
scale density.then about the approaches of nanoelectronics .at last, we discuss about the future and the scope
of nano technology. Nanoelectronics will surely revolutionize almost all fields like biology, biophysics,
bioinformatics, computer science, information technology, mathematics, physics, molecular biology and
chemistry. As well, it will improve our lifestyle




DEPT OF ECE                                                                                       BRCE
NANOELECTRONICS




                                          CHAPTER-1
               INTRODUCTIO TO NANOTECHNOLOGY


                                                        A shortened of "nanotech", is the study of the
                                                        controlling of matter on
                                                        an atomic and molecular scale. Generally
                                                        nanotechnology deals with structures of the size
                                                        100 nanometres or smaller in at least one
                                                        dimension, and involves developing materials or
                                                        devices within that size. Nanotechnology is very
                                                        diverse, ranging from extensions of
                                                        conventional device physics to completely new
                                                        approaches based upon molecular self-assembly,
                                                        from developing materials with dimensions on the
                                                        Nano scale to investigating whether we can

FIG 1.1 : Matter on atomic and molecular scale.         directly control matter on the atomic scale.

       NANOTECHNOLOGY DEALS WITH SYSTEMS DESIGNED AND MANUFACTURED AT THE SCALE OF THE
       ATOM,                                                                                             OR
HE NANOMETRE SCALE. MORE SPECIFICALLY, NANOTECHNOLOGY DEALS WITH STRUCTURES OF LESS THAN
100 NANOMETRES (NM). ONE NM IS 1 BILLIONTH OF A METER. NANOTECHNOLOGY INVOLVES THE
MANIPULATION AND CONTROL OF ATOMS AND MOLECULES, THE BUILDING BLOCKS OF ALL MATERIALS.
BROADLY SPEAKING, THERE ARE TWO APPROACHES IN NANOTECHNOLOGY: BOTTOM-UP AND TOP-DOWN.
THE FIRST APPROACH, THE BOTTOM-UP, INVOLVES MANIPULATING SMALL NUMBERS INDIVIDUAL ATOMS OR
MORE COMPLEX MOLECULES, INTO STRUCTURES TYPICALLY USING MINUTE PROBES. THE SECOND, TOP-
DOWN, APPROACH IMPLIES CONTROLLING PROCESSES TO FORCE ATOMS AND MOLECULES TO BUILD-UP
THEMSELVES TO DESIRED LOCATIONS AND/OR STRUCTURES.
       Nano’ materials have a size or features on the scale of around 1nm to 100nm nanometres.




DEPT OF ECE                                                                                      BRCE
NANOELECTRONICS




                                          CHAPTER-2
                    HISTORY OF NANOELECTRONICS


                                                                    In 1965, gordon moore, one of the
                                                                    founders of intel corporation, made the
                                                                    outstanding prediction that the number
                                                                    of transistors that could be fit in a
                                                                    given area would double every 18
                                                                    months for the next ten years. This it
                                                                    did and the phenomenon became
                                                                    known         as       moore's       law


              Fig 2.1: Moore’s law.

              This trend has continued far past the predicted 10 years until this day, going from just over
      2000 transistors in the original 4004 processors of 1971 to over 700,000,000 transistors in the core 2.
      There has, of course, been a corresponding decrease in the size of individual electronic elements,
      going from millimeters in the 60's to hundreds of nanometers in modern circuitry
              The term "nanotechnology" was first defined by norio taniguchi of the tokyo science
      university in a 1974 paper [6] as follows: "'nano-technology' mainly consists of the processing of,
      separation, consolidation, and deformation of materials by one atom or one molecule." since that
      time the definition of nanotechnology has generally been extended to include features as large as
      100 nm. Additionally, the idea that nanotechnology embraces structures exhibiting quantum
      mechanical aspects, such as quantum dots, has further evolved its definition. Nanotechnology
      and nanoscience got a boost in the early 1980s with two major developments: the birth
      of cluster science and the invention of the scanning tunneling microscope (stm). This development
      led to the discovery of fullerenes in 1985 and the structural assignment of carbon nanotubes a few
      years later. In another development, the synthesis and properties of semiconductor nanocrystals were
      studied. This led to a fast increasing number of semiconductor nanoparticles of quantum dots.



DEPT OF ECE                                                                                      BRCE
NANOELECTRONICS




                                              Chapter-3
                   Nanotechnologies Impact On Electronics

                                                               Nanotechnology is already being used by
                                                               the electronic industry and     you    will    be
                                                               surprised to know that many of today’s
                                                               electronics have already incorporated many
                                                               applications that the nanotechnology science
                                                               has developed. For example, new computer
                                                               microprocessors     have      less    than    100
                                                               nanometres (nm) features. Smaller sizes mean
                                                               a significant increase in speed and more
                                                               processing capability.
   FIG 3.1: Smart microprocessor based
computer




      These advances will undoubtedly help achieve better computers. However, at some point in time
      (very near in the future) current electronic technology will no longer be enough to handle the demand
      for new chips microprocessors. Right now, the method for chip manufacturing is known as
      lithography or etching. By this technology, a probe literally writes over a surface the chip circuit.
      Besides being small and allowing more transistors to be packed into a single chip, the uniform and
      symmetrical structure of nanotubes allows a higher electron mobility (faster electron movement in
      the       material),a       higher dielectric constant       (faster       frequency),         and       a
      symmetrical electron/hole characteristic.[4]

      Also, nano particles can be used as quantum dots.




DEPT OF ECE                                                                                          BRCE
NANOELECTRONICS




                                            Chapter-4

           How Can Nanotechnology Improve The Capabilities Of
                                    Electronic Components?
   Nanoelectronics holds some answers for how we might increase the capabilities of electronics devices
   while we reduce their weight and power consumption. Some of the nanoelectronics areas under
   development, which you can explore in more detail by following the links provided in the next section,
   include the following topics. Improving display screens on electronics devices. This involves reducing
   power consumption while decreasing the weight and thickness of the screens. INCREASING THE DENSITY
   OF MEMORY CHIPS. RESEARCHERS ARE DEVELOPING A TYPE OF MEMORY CHIP WITH A PROJECTED
   DENSITY OF ONE TERABYTE OF MEMORY PER SQUARE INCH OR GREATER. REDUCING THE SIZE OF
   TRANSISTORS USED IN INTEGRATED CIRCUITS. ONE RESEARCHER BELIEVES IT MAY BE POSSIBLE TO "PUT
   THE POWER OF ALL OF TODAY'S PRESENT COMPUTERS IN THE PALM OF YOUR HAND".


4.1 Scaling principles
   For designing nano fet apart from channel length, other parameters like doping, voltages etc. Are to be
   also scaled




                                   TABLE 4.1: SCALING PRINCIPLES


DEPT OF ECE                                                                                   BRCE
NANOELECTRONICS




                  FIG 4.1 :SCALING PRINCIPLES




DEPT OF ECE                                     BRCE
NANOELECTRONICS



   4.2 NANO MOSFET
      Ej mosfet (electrically variable shallow junction mosfet)




      4.2.1 SCALING LIMITS OF MOSFET

      Technical problem: for channel length<30nm , insulating sio2 is expected to be less than 2nm thick.
      This thin layer causes gate dielectric tunneling

      Physical problem: for channel length<10nm, direct source-drain tunneling occurs.




       Fig 4.2:schematic representation of gate –dielectric tunneling and direct source-drain tunneling




DEPT OF ECE                                                                                     BRCE
NANOELECTRONICS




   4.3 EJ- MOSFET

   * Construction

  It consists of 2 gates :upper gate and a lower gate. Gates are insulated from
each other by an integrate oxide layer




                                            FIG 4.3: E J-MOSFET

   *   Working

    Upper layer electrically induces the inversion layers that are self aligned to the lower gate and the
       lower gate controls the current between the inversion layer.
    Presence of two gates helps in suppressing short channel effects




DEPT OF ECE                                                                                   BRCE
NANOELECTRONICS




                    4.4 basic phenomenon observed in nano devices

      4.4.1 ballistic transport in nano structures

     At room temperature mean free path of electron is around 10nm.so, at ultrashort channel length
       electron scattering decreases considerably.
     At channel length less than 10nm,scattering approaches zero. It is called ballistic transport.
     With decrease in temperature mean free path can be increased & ballistic transport can be obtained
       at larger channel length.

   4.4.2 resonant tunneling in nano devices

      Rt is observed in hetero-structure semiconductor devices made from pairs of different alloys iii-v
      alloys.

      Eg. Algaas/gaas/algaas diodes




                              FIG 4.4: SHOWING RESONANT TUNNELS




DEPT OF ECE                                                                                       BRCE
NANOELECTRONICS




                                              Chapter-5

                   Contribution of nanoelectronics to the world


5.1 NANOELECTRONICS
                                                           Nanoelectronics refer to the use
                                                           of nanotechnology on electronic components,
                                                           especially transistors. Although the
                                                           term nanotechnology is generally defined as
                                                           utilizing technology less than 100 nm in size,
                                                           nanoelectronics often refer to transistor devices
                                                           that are so small that inter-atomic interactions
                                                           and mechanical properties need to be studied
                                                           extensively. As a result, present transistors do not
                                                           fall under this category, even though these devices
                                                           are manufactured with 45 nm or 32
                                                           nm technology,
                  FIG 5.1: TRANSISTOR

   Nanoelectronics are sometimes considered as disruptive technology because present candidates are
   significantly different from traditional transistors. Some of these candidates include: hybrid
   molecular/semiconductor electronics, one dimensional nanotubes/nanowires, or advanced molecular
   electronics.
   Although all of these hold promise for the future, they are still under development and will most likely
   not be used for manufacturing any time soon.




DEPT OF ECE                                                                                         BRCE
NANOELECTRONICS
.




5.2 NANOFABRICATION.

                                                              Nanofabrication can be used to construct ultra-
                                                              dense parallel arrays of nanowires, as an
                                                              alternative     to     synthesizing          nanowires
                                                              individually.

                                                              For example, single electron transistors, which
                                                              involve transistor operation based on a single
                                                              electron. Nanoelectromechanical systems also
                                                              falls         under            this           category




               FIG 5.2 : NANOFABRICATION


5.3 MOLECULAR ELECTRONICS



                                                              Single    molecule         devices    are      another
                                                              possibility. These schemes would make heavy
                                                              use of molecular self-assembly, designing the
                                                              device components to construct a larger
                                                              structure or even a complete system on their
                                                              own.     This        can      be      very      useful
                                                              for reconfigurable computing, and may even
    FIG 5.3 MOLECULAR ELECTRONICS                             completely replace present fpga technology.

    Molecular electronics is a new technology which is still in its infancy, but also brings hope for truly
    atomic scale electronic systems in the future. One of the more promising applications of molecular
    electronics was proposed by the ibm researcher ari aviram and the theoretical chemist mark ratner in
    their 1974 and 1988 papers molecules for memory, logic and amplification, (see unimolecular rectify) .
    This is one of many possible ways in which a molecular level diode / transistor might be synthesized by
    organic chemistry. A model system was proposed with a spiro carbon structure giving a molecular diode
    about half a nanometre across which could be connected by polythiophene molecular wires. Theoretical
    calculations showed the design to be sound in principle and there is still hope that such a system can be
    made to work.


DEPT OF ECE                                                                                           BRCE
NANOELECTRONICS



5.4 NANOIONICS : is the study and application
   of   phenomena,      properties,        effects   and
   mechanisms of processes connected with
   fast ion transport      (fit)      in       all-solid-
   state nanoscale systems. The topics of interest
   include      fundamental        properties         of
   oxide ceramics at nanometer length scales,
   and fast ion conductor (advanced superionic
   conductor)/electronic                                           FIG 5.4 : NANOIONICS
   conductor heterostructures.

5.5 NANOPHOTONICS:
   nanophotonics or nano-optics is the study of
   the behavior of light on the nanometer scale. It
   is considered as a branch of optical
   engineering which deals with optics, or the
   interaction of light with particles or
   substances, at deeply sub-wavelength length
   scales. Technologies in the realm of nano-
   optics include near-field scanning optical
   microscopy (nsom), photoassisted scanning
   tunnelling microscopy, and surface
   plasmon optics.

                                                            FIG 5.5 : NANNO PHOTONICS

5.6 NANOWIRES : Nanowires are ultrafine
    wires or linear arrays of dots, formed by self-
    assembly. They can be made from a wide
    range of materials. Semiconductor nanowires
    made of silicon, gallium nitride and indium
    phosphide have demonstrated remarkable
    optical,     electronic        and         magnetic
    characteristics.



DEPT OF ECE                                                                               BRCE
NANOELECTRONICS




5.7 Display : new class of display using carbon
    nanotubes as emission device for the next
    generation of monitor and television (fed
    field-emission displays).




                                                               FIG 5.7: NEXT GENERATION DISPLAY
                                                                                SCREENS

5.8 OPTICS
   An     area    of     electronics   in    which
   nanotechnology      can      make   a significant
   difference is in optics; specifically displays
   and lighting. It is true that displays have been
   becoming lighter and of a much higher
   standard in recent years, but the limits of
   current technology are fast being reached                   .

                                                                             Fig 5.8 : optics

   . Displays are still not very portable, and usually take up a lot of space. Imagine if a crystal-clear display
   existed that could be rolled up or folded away when not in use? Or a lightbulb that wasted no energy and
   saved the user vast amounts of money? Traditional light bulbs waste about 90% of their electricity use
   by turning it into heat.

   Development of applications incorporating semiconductor nanoparticles to be used in the next
   generation of products, such as display technology, lighting, solar cells and biological imaging;
   see quantum dots.




DEPT OF ECE                                                                                          BRCE
NANOELECTRONICS




5.9 TELECOMMUNICATIONS AND HANDHELD DEVICES


                                                           More and more in modern life, people are working
                                                           on the move, which means taking their laptop,
                                                           phone, and other electronic equipment everywhere
                                                           they go. There is a need to combine all these
                                                           functions in one device so that people can
                                                           communicate with colleagues and clients, whilst
                                                           continuously having access to their files regardless
                                                           of their location.

       Fig 5.9 : handheld devices

Nanotechnology can offer improved versatility through faster data transfer, more mobile processing power
and larger data storage




                                           CHAPTER-6

          ADVANTAGES OF NANOELECTRONICS TO THE
                                                 WORLD

    One of the obvious advantage is that nanoelectronics reduces size and scale of the machine with the
       help of complex integration on the circuit silicon chips.
    Advanced properties of semiconductors can be determined with the help of nanoelectronics.
    Molecular scale nanoelectronics is also known as “the next step” in the miniaturization of electronic
       devices, with latest electronics theory and research in the field of nanoelectronics, it is possible to
       explore the diverse properties of molecules.
    Extreme fabrication also supported the multiple use of single machine. Parallel processing is also
       empowered by nanoelectronics.




DEPT OF ECE                                                                                        BRCE
NANOELECTRONICS




                                           CHAPTER-7

                 APPLICATIONS UNDER DEVELOPMENT

Researchers are looking into the following nanoelectronics projects:

                                                                  1. Building transistors       from          carbon
                                                                     nanotube to enable minimum transistor
                                                                     dimensions of a few nanometers and
                                                                     developing             techniques            to
                                                                     manufacture transistors. Using electrodes
                                                                     made from nanowires that would enable
                                                                     flat panel displays to be flexible as well
                                                                     as thinner than current           flat    panel
                                                                     displays.
   fig 7.1 transistors built using carbon nanotubes

     2. Using mems techniques to control an array of probes whose tips have a radius of a few nanometers.
         These probes are used to write and read data onto a polymer film, with the aim of
         producing memory chips with a density of one terabyte per square inch or greater.

     3. Transistors built in single atom thick
         graphene film to enable very high speed
         transistors. A small sheet of graphene is
         taken &     channels are carved into it
         using electron beam lithography.




                                                                  Fig 7.2 schematic of a graphine transistor

     4. Combining gold nanoparticles with organic molecules to create a transistor known as a nomfet
         (nanoparticle organic memory field-effect transistor).



DEPT OF ECE                                                                                            BRCE
NANOELECTRONICS

    5. Using carbon nanotubes to direct electrons to illuminate pixels, resulting in a lightweight,
         millimeter thick "nanoemmissive" display panel.
    6.   making integrated circuits with features that can be measured in nanometers (nm), such as the
         process that allows the production of integrated circuits with 45 nm wide transistor gates.

                                                           7.   Using   nano    sized   magnetic       rings    to
                                                           make magneto resistive random access memory
                                                           (mram) which     research    has   indicated        may
                                                           allow memory density of 400 gb per square inch




                                                           Fig 7.3 : mram

          8. Developing molecular-sized transistors which may allow us to shrink the width of transistor
              gates to approximately one nm which will significantly increase transistor density in
              integrated circuits.
          9. Using self-aligning nanostructures to manufacture nanoscale integrated circuits.
          10. Using nanowires to build transistors without p-n junctions.
          11. Using magnetic quantum dots in spintronic semiconductor devices. Spintronic devices are
              expected to be significantly higher density and lower power consumption because they
              measure the spin of electronics to determine a 1 or 0, rather than measuring groups of
              electronics as done in current semiconductor devices




DEPT OF ECE                                                                                        BRCE
NANOELECTRONICS




                                        CHAPTER-8
                                   BIBILOGRAPHY

   1. “Introductio To Nanotechnology, History Of Nanoelectronics, Nanotechnologies
        Impact On Electronics” . From Http://En.Wikipedia.Org/Wiki/Nanotechnology


   2. “How can nanotechnology improve the capabilities of electronic
        components?” From http://www.understandingnano.com/nanotechnology-electronics.html
   3. Contribution of nanoelectronics to the world”, advantages of
        nanoelectronics to the world
        from http://www.wtec.org/nano2/nanotechnology_research_directions_to_2020/chapter08.pdf

   4.   Applications under development from:-
        http://books.google.co.in/books?id=epmlnv4hur8c&pg=pa416&lpg=pa416&dq=applications+under
        +development+of+nanoelectronics&source=bl&ots=qda8y3vzsa&sig=m05eeudqfkdp-
        czhksmmcuavoqa&hl=en&sa=x&ei=wamlt-pjh4-
        hrafpztxscw&ved=0cfiq6aewba#v=onepage&q&f=false

   5. Images and tables from www.google.com




DEPT OF ECE                                                                               BRCE

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nanotechnology

  • 1. NANOELECTRONICS VISVESVARAYA TECHNOLOGICAL UNIVERSITY BELGAUM A SEMINAR REPORT ON NANOELECTRONICS Submitted in partial fulfillment of the requirements for the award of the degree of BACHELOR OF ENGINEERING IN ELECTRONICS & COMMUNICATION SUBMITTED BY DEEPU.P.V : 1BO08EC009 BRINDAVAN COLLEGE OF ENGINEERING DWARAKANAGAR, BANGALORE MONTH AND 2012 DEPT OF ECE BRCE
  • 2. NANOELECTRONICS BRINDAVAN COLLEGE OF ENGINEERING DWARAKANAGAR,YELAHANKA BANGALORE ELECTRONICS & COMMUNICATION CERTIFICATE Certified that seminar work entitled “ nanoelectronics ” is a bonafide work carried out in the eighth semester by “ deepu. P.v ” in partial fulfillment for the award of bachelor of engineering in “ electronics & communication ” from visvesvaraya technological university during the academic year 2011-2012, who carried out the seminar work under the guidance and no part of this work has been submitted earlier for the award of any degree SIGNATURE SIGNATURE V.K. GUPTA KEERTHI .N.V SEMINAR CO-ORDINATOR INTERNAL GUIDE SR. LECTURER LECTURER DEPT OF ECE, BRCE DEPT OF ECE, BRCE SIGNATURE PROF G. VENKATESH HEAD OF THE DEPARTMENT DEPT OF ECE ,BRCE DEPT OF ECE BRCE
  • 3. NANOELECTRONICS * CONTENTS Abstract : Nanoelectronics Chapter-1 : Introductio To Nanotechnology Chapter-2 : History Of Nanoelectronics Chapter-3 : Nanotechnologies Impact On Electronics Chapter-4 : How Can Nanotechnology Improve The Capabilities Of Electronic Components? Chapter-5 : Contribution Of Nanoelectronics To The World Chapter-6 : Advantages Of Nanoelectronics To The World Chapter-7 : Applications Under Development Chapter-8 : Bibilography DEPT OF ECE BRCE
  • 4. NANOELECTRONICS List Of Tabels 1. Table 4.1: Scaling Principles List Of Figures 1. Fig 1.1 : Matter On Atomic And Molecular Scale. 2. Fig 2.1: Moore’s Law. 3. Fig 3.1: Smart Microprocessor Based Computer 4. Fig 4.1 :Scaling Principles 5. Fig 4.2:Schematic Representation Of Gate –Dielectric Tunneling And Direct Source-Drain Tunnelling 6. Fig 4.3: E J-Mosfet 7. Fig 4.4: Showing Resonant Tunnels 8. Fig 5.1: Transistor 9. Fig 5.2 : Nanofabrication 10. Fig 5.3 Molecular Electronics 11. Fig 5.4 : Nanoionics 12. Fig 5.5 : Nanno Photonics 13. Fig 5.6: Nanowire 14. Fig 5.7: Next Generation Display Screens 15. Fig 5.8 : Optics 16. Fig 5.9 : Handheld Devices 17. Fig 7.1 Transistors Built Using Carbon Nanotubes 18. Fig 7.2 Schematic Of A Graphine Transistor 19. Fig 7.3 : Mram DEPT OF ECE BRCE
  • 5. NANOELECTRONICS NANOELECTRONICS ABSTRACT Electronic industry is developing rapidly and tremendously over past few decades. Our traditional microelectronic devices appear to be saturated for further miniaturization. Hence, new technologies are developing vigorously. The range of nanotechnology and designs for nano electronic devices are discussed in this paper. The paper also describes and compares in nonmathematical way, the operating principles, advantages and status of new technologies that promise to continue miniaturization of computers to the scale of few nanometers and ultimately to molecular scale. Devices having very small size and dimensions of only few nanometers i.e (10 ^ -9m) are most promising alternatives for this problem. The research work is yet going on to design .in this paper first, we will discuss about nanotechnology , nanotechnologies impact electronics, history of nanoelectronics . Second, we will review architectures being developed for circuit- level integration, hybrid crossbar/cmos circuits and array-based systems, including experimental demonstrations of key concepts such lithography-independent, chemically coded stochastic demultipluxers. These device structures show robust switching, promising performance metrics and the potential for terabit- scale density.then about the approaches of nanoelectronics .at last, we discuss about the future and the scope of nano technology. Nanoelectronics will surely revolutionize almost all fields like biology, biophysics, bioinformatics, computer science, information technology, mathematics, physics, molecular biology and chemistry. As well, it will improve our lifestyle DEPT OF ECE BRCE
  • 6. NANOELECTRONICS CHAPTER-1 INTRODUCTIO TO NANOTECHNOLOGY A shortened of "nanotech", is the study of the controlling of matter on an atomic and molecular scale. Generally nanotechnology deals with structures of the size 100 nanometres or smaller in at least one dimension, and involves developing materials or devices within that size. Nanotechnology is very diverse, ranging from extensions of conventional device physics to completely new approaches based upon molecular self-assembly, from developing materials with dimensions on the Nano scale to investigating whether we can FIG 1.1 : Matter on atomic and molecular scale. directly control matter on the atomic scale. NANOTECHNOLOGY DEALS WITH SYSTEMS DESIGNED AND MANUFACTURED AT THE SCALE OF THE ATOM, OR HE NANOMETRE SCALE. MORE SPECIFICALLY, NANOTECHNOLOGY DEALS WITH STRUCTURES OF LESS THAN 100 NANOMETRES (NM). ONE NM IS 1 BILLIONTH OF A METER. NANOTECHNOLOGY INVOLVES THE MANIPULATION AND CONTROL OF ATOMS AND MOLECULES, THE BUILDING BLOCKS OF ALL MATERIALS. BROADLY SPEAKING, THERE ARE TWO APPROACHES IN NANOTECHNOLOGY: BOTTOM-UP AND TOP-DOWN. THE FIRST APPROACH, THE BOTTOM-UP, INVOLVES MANIPULATING SMALL NUMBERS INDIVIDUAL ATOMS OR MORE COMPLEX MOLECULES, INTO STRUCTURES TYPICALLY USING MINUTE PROBES. THE SECOND, TOP- DOWN, APPROACH IMPLIES CONTROLLING PROCESSES TO FORCE ATOMS AND MOLECULES TO BUILD-UP THEMSELVES TO DESIRED LOCATIONS AND/OR STRUCTURES. Nano’ materials have a size or features on the scale of around 1nm to 100nm nanometres. DEPT OF ECE BRCE
  • 7. NANOELECTRONICS CHAPTER-2 HISTORY OF NANOELECTRONICS In 1965, gordon moore, one of the founders of intel corporation, made the outstanding prediction that the number of transistors that could be fit in a given area would double every 18 months for the next ten years. This it did and the phenomenon became known as moore's law Fig 2.1: Moore’s law. This trend has continued far past the predicted 10 years until this day, going from just over 2000 transistors in the original 4004 processors of 1971 to over 700,000,000 transistors in the core 2. There has, of course, been a corresponding decrease in the size of individual electronic elements, going from millimeters in the 60's to hundreds of nanometers in modern circuitry The term "nanotechnology" was first defined by norio taniguchi of the tokyo science university in a 1974 paper [6] as follows: "'nano-technology' mainly consists of the processing of, separation, consolidation, and deformation of materials by one atom or one molecule." since that time the definition of nanotechnology has generally been extended to include features as large as 100 nm. Additionally, the idea that nanotechnology embraces structures exhibiting quantum mechanical aspects, such as quantum dots, has further evolved its definition. Nanotechnology and nanoscience got a boost in the early 1980s with two major developments: the birth of cluster science and the invention of the scanning tunneling microscope (stm). This development led to the discovery of fullerenes in 1985 and the structural assignment of carbon nanotubes a few years later. In another development, the synthesis and properties of semiconductor nanocrystals were studied. This led to a fast increasing number of semiconductor nanoparticles of quantum dots. DEPT OF ECE BRCE
  • 8. NANOELECTRONICS Chapter-3 Nanotechnologies Impact On Electronics Nanotechnology is already being used by the electronic industry and you will be surprised to know that many of today’s electronics have already incorporated many applications that the nanotechnology science has developed. For example, new computer microprocessors have less than 100 nanometres (nm) features. Smaller sizes mean a significant increase in speed and more processing capability. FIG 3.1: Smart microprocessor based computer These advances will undoubtedly help achieve better computers. However, at some point in time (very near in the future) current electronic technology will no longer be enough to handle the demand for new chips microprocessors. Right now, the method for chip manufacturing is known as lithography or etching. By this technology, a probe literally writes over a surface the chip circuit. Besides being small and allowing more transistors to be packed into a single chip, the uniform and symmetrical structure of nanotubes allows a higher electron mobility (faster electron movement in the material),a higher dielectric constant (faster frequency), and a symmetrical electron/hole characteristic.[4] Also, nano particles can be used as quantum dots. DEPT OF ECE BRCE
  • 9. NANOELECTRONICS Chapter-4 How Can Nanotechnology Improve The Capabilities Of Electronic Components? Nanoelectronics holds some answers for how we might increase the capabilities of electronics devices while we reduce their weight and power consumption. Some of the nanoelectronics areas under development, which you can explore in more detail by following the links provided in the next section, include the following topics. Improving display screens on electronics devices. This involves reducing power consumption while decreasing the weight and thickness of the screens. INCREASING THE DENSITY OF MEMORY CHIPS. RESEARCHERS ARE DEVELOPING A TYPE OF MEMORY CHIP WITH A PROJECTED DENSITY OF ONE TERABYTE OF MEMORY PER SQUARE INCH OR GREATER. REDUCING THE SIZE OF TRANSISTORS USED IN INTEGRATED CIRCUITS. ONE RESEARCHER BELIEVES IT MAY BE POSSIBLE TO "PUT THE POWER OF ALL OF TODAY'S PRESENT COMPUTERS IN THE PALM OF YOUR HAND". 4.1 Scaling principles For designing nano fet apart from channel length, other parameters like doping, voltages etc. Are to be also scaled TABLE 4.1: SCALING PRINCIPLES DEPT OF ECE BRCE
  • 10. NANOELECTRONICS FIG 4.1 :SCALING PRINCIPLES DEPT OF ECE BRCE
  • 11. NANOELECTRONICS 4.2 NANO MOSFET Ej mosfet (electrically variable shallow junction mosfet) 4.2.1 SCALING LIMITS OF MOSFET Technical problem: for channel length<30nm , insulating sio2 is expected to be less than 2nm thick. This thin layer causes gate dielectric tunneling Physical problem: for channel length<10nm, direct source-drain tunneling occurs. Fig 4.2:schematic representation of gate –dielectric tunneling and direct source-drain tunneling DEPT OF ECE BRCE
  • 12. NANOELECTRONICS 4.3 EJ- MOSFET * Construction It consists of 2 gates :upper gate and a lower gate. Gates are insulated from each other by an integrate oxide layer FIG 4.3: E J-MOSFET * Working  Upper layer electrically induces the inversion layers that are self aligned to the lower gate and the lower gate controls the current between the inversion layer.  Presence of two gates helps in suppressing short channel effects DEPT OF ECE BRCE
  • 13. NANOELECTRONICS 4.4 basic phenomenon observed in nano devices 4.4.1 ballistic transport in nano structures  At room temperature mean free path of electron is around 10nm.so, at ultrashort channel length electron scattering decreases considerably.  At channel length less than 10nm,scattering approaches zero. It is called ballistic transport.  With decrease in temperature mean free path can be increased & ballistic transport can be obtained at larger channel length. 4.4.2 resonant tunneling in nano devices Rt is observed in hetero-structure semiconductor devices made from pairs of different alloys iii-v alloys. Eg. Algaas/gaas/algaas diodes FIG 4.4: SHOWING RESONANT TUNNELS DEPT OF ECE BRCE
  • 14. NANOELECTRONICS Chapter-5 Contribution of nanoelectronics to the world 5.1 NANOELECTRONICS Nanoelectronics refer to the use of nanotechnology on electronic components, especially transistors. Although the term nanotechnology is generally defined as utilizing technology less than 100 nm in size, nanoelectronics often refer to transistor devices that are so small that inter-atomic interactions and mechanical properties need to be studied extensively. As a result, present transistors do not fall under this category, even though these devices are manufactured with 45 nm or 32 nm technology, FIG 5.1: TRANSISTOR Nanoelectronics are sometimes considered as disruptive technology because present candidates are significantly different from traditional transistors. Some of these candidates include: hybrid molecular/semiconductor electronics, one dimensional nanotubes/nanowires, or advanced molecular electronics. Although all of these hold promise for the future, they are still under development and will most likely not be used for manufacturing any time soon. DEPT OF ECE BRCE
  • 15. NANOELECTRONICS . 5.2 NANOFABRICATION. Nanofabrication can be used to construct ultra- dense parallel arrays of nanowires, as an alternative to synthesizing nanowires individually. For example, single electron transistors, which involve transistor operation based on a single electron. Nanoelectromechanical systems also falls under this category FIG 5.2 : NANOFABRICATION 5.3 MOLECULAR ELECTRONICS Single molecule devices are another possibility. These schemes would make heavy use of molecular self-assembly, designing the device components to construct a larger structure or even a complete system on their own. This can be very useful for reconfigurable computing, and may even FIG 5.3 MOLECULAR ELECTRONICS completely replace present fpga technology. Molecular electronics is a new technology which is still in its infancy, but also brings hope for truly atomic scale electronic systems in the future. One of the more promising applications of molecular electronics was proposed by the ibm researcher ari aviram and the theoretical chemist mark ratner in their 1974 and 1988 papers molecules for memory, logic and amplification, (see unimolecular rectify) . This is one of many possible ways in which a molecular level diode / transistor might be synthesized by organic chemistry. A model system was proposed with a spiro carbon structure giving a molecular diode about half a nanometre across which could be connected by polythiophene molecular wires. Theoretical calculations showed the design to be sound in principle and there is still hope that such a system can be made to work. DEPT OF ECE BRCE
  • 16. NANOELECTRONICS 5.4 NANOIONICS : is the study and application of phenomena, properties, effects and mechanisms of processes connected with fast ion transport (fit) in all-solid- state nanoscale systems. The topics of interest include fundamental properties of oxide ceramics at nanometer length scales, and fast ion conductor (advanced superionic conductor)/electronic FIG 5.4 : NANOIONICS conductor heterostructures. 5.5 NANOPHOTONICS: nanophotonics or nano-optics is the study of the behavior of light on the nanometer scale. It is considered as a branch of optical engineering which deals with optics, or the interaction of light with particles or substances, at deeply sub-wavelength length scales. Technologies in the realm of nano- optics include near-field scanning optical microscopy (nsom), photoassisted scanning tunnelling microscopy, and surface plasmon optics. FIG 5.5 : NANNO PHOTONICS 5.6 NANOWIRES : Nanowires are ultrafine wires or linear arrays of dots, formed by self- assembly. They can be made from a wide range of materials. Semiconductor nanowires made of silicon, gallium nitride and indium phosphide have demonstrated remarkable optical, electronic and magnetic characteristics. DEPT OF ECE BRCE
  • 17. NANOELECTRONICS 5.7 Display : new class of display using carbon nanotubes as emission device for the next generation of monitor and television (fed field-emission displays). FIG 5.7: NEXT GENERATION DISPLAY SCREENS 5.8 OPTICS An area of electronics in which nanotechnology can make a significant difference is in optics; specifically displays and lighting. It is true that displays have been becoming lighter and of a much higher standard in recent years, but the limits of current technology are fast being reached . Fig 5.8 : optics . Displays are still not very portable, and usually take up a lot of space. Imagine if a crystal-clear display existed that could be rolled up or folded away when not in use? Or a lightbulb that wasted no energy and saved the user vast amounts of money? Traditional light bulbs waste about 90% of their electricity use by turning it into heat. Development of applications incorporating semiconductor nanoparticles to be used in the next generation of products, such as display technology, lighting, solar cells and biological imaging; see quantum dots. DEPT OF ECE BRCE
  • 18. NANOELECTRONICS 5.9 TELECOMMUNICATIONS AND HANDHELD DEVICES More and more in modern life, people are working on the move, which means taking their laptop, phone, and other electronic equipment everywhere they go. There is a need to combine all these functions in one device so that people can communicate with colleagues and clients, whilst continuously having access to their files regardless of their location. Fig 5.9 : handheld devices Nanotechnology can offer improved versatility through faster data transfer, more mobile processing power and larger data storage CHAPTER-6 ADVANTAGES OF NANOELECTRONICS TO THE WORLD  One of the obvious advantage is that nanoelectronics reduces size and scale of the machine with the help of complex integration on the circuit silicon chips.  Advanced properties of semiconductors can be determined with the help of nanoelectronics.  Molecular scale nanoelectronics is also known as “the next step” in the miniaturization of electronic devices, with latest electronics theory and research in the field of nanoelectronics, it is possible to explore the diverse properties of molecules.  Extreme fabrication also supported the multiple use of single machine. Parallel processing is also empowered by nanoelectronics. DEPT OF ECE BRCE
  • 19. NANOELECTRONICS CHAPTER-7 APPLICATIONS UNDER DEVELOPMENT Researchers are looking into the following nanoelectronics projects: 1. Building transistors from carbon nanotube to enable minimum transistor dimensions of a few nanometers and developing techniques to manufacture transistors. Using electrodes made from nanowires that would enable flat panel displays to be flexible as well as thinner than current flat panel displays. fig 7.1 transistors built using carbon nanotubes 2. Using mems techniques to control an array of probes whose tips have a radius of a few nanometers. These probes are used to write and read data onto a polymer film, with the aim of producing memory chips with a density of one terabyte per square inch or greater. 3. Transistors built in single atom thick graphene film to enable very high speed transistors. A small sheet of graphene is taken & channels are carved into it using electron beam lithography. Fig 7.2 schematic of a graphine transistor 4. Combining gold nanoparticles with organic molecules to create a transistor known as a nomfet (nanoparticle organic memory field-effect transistor). DEPT OF ECE BRCE
  • 20. NANOELECTRONICS 5. Using carbon nanotubes to direct electrons to illuminate pixels, resulting in a lightweight, millimeter thick "nanoemmissive" display panel. 6. making integrated circuits with features that can be measured in nanometers (nm), such as the process that allows the production of integrated circuits with 45 nm wide transistor gates. 7. Using nano sized magnetic rings to make magneto resistive random access memory (mram) which research has indicated may allow memory density of 400 gb per square inch Fig 7.3 : mram 8. Developing molecular-sized transistors which may allow us to shrink the width of transistor gates to approximately one nm which will significantly increase transistor density in integrated circuits. 9. Using self-aligning nanostructures to manufacture nanoscale integrated circuits. 10. Using nanowires to build transistors without p-n junctions. 11. Using magnetic quantum dots in spintronic semiconductor devices. Spintronic devices are expected to be significantly higher density and lower power consumption because they measure the spin of electronics to determine a 1 or 0, rather than measuring groups of electronics as done in current semiconductor devices DEPT OF ECE BRCE
  • 21. NANOELECTRONICS CHAPTER-8 BIBILOGRAPHY 1. “Introductio To Nanotechnology, History Of Nanoelectronics, Nanotechnologies Impact On Electronics” . From Http://En.Wikipedia.Org/Wiki/Nanotechnology 2. “How can nanotechnology improve the capabilities of electronic components?” From http://www.understandingnano.com/nanotechnology-electronics.html 3. Contribution of nanoelectronics to the world”, advantages of nanoelectronics to the world from http://www.wtec.org/nano2/nanotechnology_research_directions_to_2020/chapter08.pdf 4. Applications under development from:- http://books.google.co.in/books?id=epmlnv4hur8c&pg=pa416&lpg=pa416&dq=applications+under +development+of+nanoelectronics&source=bl&ots=qda8y3vzsa&sig=m05eeudqfkdp- czhksmmcuavoqa&hl=en&sa=x&ei=wamlt-pjh4- hrafpztxscw&ved=0cfiq6aewba#v=onepage&q&f=false 5. Images and tables from www.google.com DEPT OF ECE BRCE