1. Angstrem P JSC i ntroduction

2. Angstrem PJSC 25.06.1963 Establishment of R&D Institute of Precision Technology with “ Angstrem ” experimental fab 23.06.1993 Restructuring into Angstrem JSC Specialization • Standard, custom and semi-custom LSI design . • 150 mm IC wafer processing (0 .6 – 1 . 0 μ m ) – 8 000 wafers/month. • Assembly into ceramic-metal and plastic packages . • Assembly of modules, smart cards, RF transponders and card readers . • Product testing and certification . • ISO -9001 (1994/2000) certified in 2000 .

3. Angstrem PJSC Activities • Design, production and sales of state-of-the-art products : electronic ICs, semiconductor and MEMS devices. • Enhancement and upgrading of design and production technologies. • Customer satisfaction through all currently used device production modes, including : “ Front - End ”, “ Back - End ”, “Fabless ”, “ Foundry ” , etc . • Offering our customers modern circuit design environment to provide integrated solutions for the customer’s “ know - how ” . • Engaging foreign foundry companies for product manufacturing . • Testing and qualification of products for a variety of applications .

4. Products Angstrem is the Russian leader in the following products : – Mass production : • Gate-array chips configurable into semi-custom LSI circuits, • Identification LSI ( contact ID and RFID) , • Memory LSI , • Power devices , • LCD control LSI . Baseline upgradeable products : • Microprocessors, microcontrollers, DSPs , • Analog-Digital IC , • Standard logic IC , • Identification (ID) devices and systems , • Interface LSI , • Radio, TV, telecommunications LSI , • Automotive LSI , • Power-saving system LSI , • Medical application LSI , • Electronic calculator, clock/watch. Game LSI .

5. Sales Markets

6. Basic Technologies Under dev. Under dev. CMOS with 2.0, 1.6, 1.2, 1.0, 0.8, 0.6 µm design rules MCU MCU + EEPROM М PU + М PU RISC (32 b. ) DSP SRAM, ROM LCD Drivers Logic, Gate Arrays Mixed signal AD Arrays High Voltage Power MOSFET Foundry 1P1M, 1P2M 1P1M, 1P2M 1P1M, 1P2M, 2P1M 1P1M, 1P2M , 2Р2М 1.2-2.0  m 1.6-2.0  m 1.0-1.2  m 0.6- 0 . 8  m MOSFET, FRED , IGBT BiCMOS CMOS

7. 150 mm Production Line ( Fab 1) Capacity – 8 000 wafers/month , design rules – 0 .6 -1 . 0 μ m Area Equipment Photolithography Canon FPA2000i steppers ( 0 . 45 μ m ) Dry etching LAM (RAINBOW 4620; 4500; TCP9400); Matrix106; GIR-260 Ion Implantation Eaton NV-10-90; NV-6200 Wet Bench FSI; Semitool (SRD); Verteq CVD ASM Diffusion ASM Metallization MRC Testing MPV-CD; MPV-SP; CD-SEM; Imager 3300; RS50e; Vector-22

9. Quality Certificates EN ISO 900 1 ( 2000 ) 15.03. 2006 г. EN ISO 900 1 (1994) 27.09.2000