SILICON-CARBIDE BASED TEMPERATURE SENSOR USING OPTICAL PYROMETRY AND LASER INTERFEROMETRY
•Download as PPT, PDF•
2 likes•1,541 views
![[object Object]](https://image.slidesharecdn.com/ppt0000004-111010210541-phpapp02/85/SILICON-CARBIDE-BASED-TEMPERATURE-SENSOR-USING-OPTICAL-PYROMETRY-AND-LASER-INTERFEROMETRY-1-320.jpg)
![[object Object]](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Recommended
More Related Content
What's hot
What's hot (20)
Viewers also liked
Viewers also liked (20)
Similar to SILICON-CARBIDE BASED TEMPERATURE SENSOR USING OPTICAL PYROMETRY AND LASER INTERFEROMETRY
Similar to SILICON-CARBIDE BASED TEMPERATURE SENSOR USING OPTICAL PYROMETRY AND LASER INTERFEROMETRY (20)
More from I'am Ajas
More from I'am Ajas (15)
Recently uploaded
Recently uploaded (20)
SILICON-CARBIDE BASED TEMPERATURE SENSOR USING OPTICAL PYROMETRY AND LASER INTERFEROMETRY
- 4. USES FIRING TEMPERATURE OF 1430°C
- 5. COMBUSTION SECTION TEMPERATURE IS 1500°c
- 20. λ = emitted radiation wavelength T= temperature H= planks constant(6.62606957×10 −34) C= speed of light K= boltzmann’s constant(1.380 64×10 −23) ACCRODING TO PLANK’S LAW
- 21. As= SENSOR SPECIFIC CONSTANT € = SPECIFIC EMISSIVITY OF SiC C= hc/k
- 22. R=ratio of power output; α , β =constants determined by sensor calibration; T=temperature;
- 23. FINDING α AND β
- 24. R VS T (calibration curve) FIG:2
- 26. P VS T CURVE
- 27. P VS λ CURVE
- 28. Pmin AND Pmax LOCALIZED MINMUM AND MAXIMUM POWER VALUES