The GaN power industry is consolidating in preparation for significant growth 80% ANNUAL GROWTH FROM 2016-2020! Overall, 2020 could see an estimated device market size of almost $600M, leading to approximately 580,000 x 6” wafers to be processed. Ramp-up will be quite impressive starting in 2016, at an estimated 80% CAGR through 2020, based upon a scenario where EV/HEV begins adopting GaN in 2018-2019. The power supply/PFC segment will dominate the business from 2015-2018, ultimately representing 50% of device sales. At that point, automotive will then catch-up. In UPS applications, the medium-power segment is likely to be very much in line with the GaN value proposition, and savings at system level will be demonstrated. We think GaN technology could grab up to 15% of market share in this field by 2020. Room for extra cost in motor drive applications is unlikely. Therefore, the incentives to implement new technologies such as GaN have to be serious and strong. Considering the possible improvement of conversion efficiency, and augmented by a predictable price parity with Si solutions by 2018, we expect GaN to start being implemented at a slow rate in motor control by 2015-2016, and reach around $45M in revenue by 2020. The PV inverters segment has already adopted SiC technology, and products are now commercially available. It’s possible that GaN could partially displace SiC thanks to better price positioning. However, now that SiC is in place, qualifying GaN may be more challenging. This report illustrates the full coverage of GaN device market data, split by application and through 2020. More information on that report at http://www.i-micronews.com/reports/Power-GaN-Market/3/443/

1. © 2014
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Power GaN
GaN technologies for power electronic applications:
Industry and market status & forecasts
2014 edition
75, cours Emile ZOLA, F-69100 Villeurbanne, France
Tel: +33 472 83 01 80 - Fax: +33 472 83 01 83
Web: http://www.yole.fr
Dow corning
FBHEpiGaN
AZZURRO
FBH EPC Corp. IMEC
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GaN Devices in Power Application
2010-2020 market size, split by application
Executive Summary
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GaN-based Power Electronics
Estimated accessible markets, growth rate, and time to market
GaN Power Electronics
40-600V 600V
650V
1.2kV
600V
600V
1.2kV
600V
600V 1.7–6.5 kV1.7kV
Written in the bubbles is
the main device voltage
target for GaN
Bubble size is related to
Si device market as of
2013, most likely
accessible to GaN
1.2kV
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% of GaN revenues by company headquarter
location. 2010-2020
Executive Summary
US domination
(IR & EPC)
Japan ramp-up Taiwan & Korea starting
Japan ramp-up
Europe + Japan starting
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6” GaN-on-Si Epiwafer Market
Price evolution roadmap to 2020
Executive Summary
Based upon R&D volumes up to 2011, qualification volumes in 2012 & 2013, then production volume orders beyond 2013
Epiwafer is 6 to 7µm GaN epilayer
Dislocation Density in the ~108 / cm²
Carrier is Si (111)
Bow is < 30µm
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6” (equiv.) wafer market volume demand
2010-2020 market volume, split by application, in units
Executive Summary
The calculation here is based on 6” equivalent substrates. We expect the market will be ~100% 6” from now to 2015, then 8” will be introduced
and will handle 50% of the processed surface in 2020.
300mm GaN-on-Si is not forecast until 2020. That simulates what could be the market $ is 100% is sourced from external merchant suppliers
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Our prediction for 2013-2020 power
electronics envisioned evolution (1/2)
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GaN transistor type acceptance matrix
Noff (E-mode)
Native
Noff
cascode
Non (D-mode)
Application A 2 2 2
Application B 2 3 3
Application C 2 3 3
Application D 2 3 4
Application E 2 3 3
Application F 2 3 4
Application G 2 3 3
Application H 2 3 3
Application I 1 4 4
Application J 1 4 4
1: Mandatory 2: most likely / preferred
3: possible alternate 4: non-suitable
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Main Power GaN Players and Related Business Model
Company GaN epiwafer GaN device GaN-on-xx Wafer Ø Comments
Company A X FL Sapphire Spin-off Univ. S. Carolina
Company B X Si, SiC, Sapphire 2” to 6”
Company C (X) X Si 6” & 8” 400m² GaN pilot line in Belgium
Company D (X) X Si 6”
600V Noff Gate Injection HEMT
samples by March 2013
Company E X Sapphire 2” & 4”
Company F (X) (X) Sapphire 4”
For internal use only: PFC module.
Up to 650V
Company G (X) X SiC 4” Open foundry. 650V/30A product.
Company H (X) X Silicon 6”
First HEMT demo exhibited in Oct
2012. App is contactless charging
Company I (X) X Si 5” Super Lattice technique
Company J (X) X Si 600V HEMT samples by April 2013
Company K (X) X Bulk GaN
Company L X Silicon 6” & 8”
MOCVD in house (Tsukuba). 3 to
5µm thick
Company M ? X Si Monolithic integration of GaN IC
Company N (X) X SiC
Company O (X) X SiC & Si 4” & 6”
Agreement with XXX for R&D and
manufacturing
Company P FL S.I. SiC MOSHEMT structure. Noff
Source: Yole Développement
GaN Industry
FL: Fab-less business model. Design only
(X): For internal purpose only: no merchant business
Power GaN pure-players
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Ref XXX SJ MOSFET
Process cost analysis
Courtesy of System Plus Consulting
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Payback Time Estimation
Overall results
It would take almost 4 years
to absorb full-GaN PFC extra
cost for a LCD TV set usage
For a 24/7 operation
(data center or telecom
server) the ROI is
obtained in < 1year
From 2018, the intrinsic cost of GaN PFC
could become cheaper than the silicon
version.
PFC, DC-DC & POL Market
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• AC Slow charger on-board:
– Power: X.X to X.2 kW. Average: X.6 kW
– Standard socket (110-220V 10A, 16A, 32A, single-phase) available in home
– Devices: MOSFET + diodes
• AC Quick charger on-board:
– Power: X1 to X2 kW. X3 W after 2020. Average: X2 kW
– Specific socket: 380-400V, 32A to 63A 3-phase
– Devices: IGBT + diodes
– Average power module price / car: $X00
• DC quick charger off-board:
– Power: 50kW+. Based upon charging station
“street charger”
Topologies of EV Chargers
Off board On board
Grid Battery
BatteryGrid
Off board On board
EV/pHEV battery charger
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