SPICE MODEL of SSM3K37CT (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: SSM3K37CT
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1

MOSFET MODEL
PSpice model
parameter
LEVEL
L
W
KP
RS
RD
VTO
RDS
TOX
CGSO
CGDO
CBD
MJ
PB
FC
RG
IS
N
RB
PHI
GAMMA
DELTA
ETA
THETA
KAPPA
VMAX
XJ
UO

Model description
Channel Length
Channel Width
Transconductance
Source Ohmic Resistance
Ohmic Drain Resistance
Zero-bias Threshold Voltage
Drain-Source Shunt Resistance
Gate Oxide Thickness
Zero-bias Gate-Source Capacitance
Zero-bias Gate-Drain Capacitance
Zero-bias Bulk-Drain Junction Capacitance
Bulk Junction Grading Coefficient
Bulk Junction Potential
Bulk Junction Forward-bias Capacitance Coefficient
Gate Ohmic Resistance
Bulk Junction Saturation Current
Bulk Junction Emission Coefficient
Bulk Series Resistance
Surface Inversion Potential
Body-effect Parameter
Width effect on Threshold Voltage
Static Feedback on Threshold Voltage
Mobility Modulation
Saturation Field Factor
Maximum Drift Velocity of Carriers
Metallurgical Junction Depth
Surface Mobility

2

Transconductance Characteristics
Circuit Simulation Result
600
Measurement

Simulation

500

gfs (mS)

400

300

200

100

0
0

100

200

300

400

Drain current ID (mA)

Comparison table
gfs (ms)
Measurement
Simulation

Id(mA)

%Error

20
50

113.000
190.000

117.678
185.972

4.14
-2.12

100

275.000

262.816

-4.43

200

365.000

371.284

1.72

400

500.000

524.276

4.86

3

Vgs-Id Characteristics
Circuit Simulation result
1.0A

100mA

10mA

1.0mA
0V

1.0V

2.0V

3.0V

I(V3)
V_V1

Evaluation circuit
V3

0Vdc
V2
U1
SSM3K37CT

3

V1

0Vdc

0

4

Comparison Graph
1000
Measurement

Drain current ID (mA)

Simulation

100

10

0

1

2

3

Gate-source voltage V GS (V)

Simulation Result

ID(mA)
10
20
50
100
200
400

VGS(V)
Measurement
0.765
0.850
0.990
1.200
1.570
2.110

Simulation
0.730
0.830
1.027
1.250
1.565
2.012

%Error
-4.56
-2.39
3.76
4.17
-0.30
-4.65

5

Rds(on) Characteristics

100mA

80mA

60mA

40mA

20mA

0A
0V

20mV
I(V3)

40mV

60mV

80mV

100mV

120mV

140mV

160mV

V_VDS

Evaluation circuit
V3

0Vdc
VDS
U1
SSM3K37CT

0Vdc

V1
4.5

0

Simulation Result
ID = 0.1A, VGS = 4.5V
R DS (on)



Measurement
1.650

Simulation
1.650

%Error
0.00

6

Gate Charge Characteristics
8.0V

6.0V

4.0V

2.0V

0V
0

0.1n
V(W1:3)

0.2n

0.3n

0.4n

0.5n

0.6n

0.7n

0.8n

0.9n

Time*1mA

Evaluation circuit

D2
Dbreak
PER = 1000u
PW = 600u
TF = 5n
TR = 5n
TD = 0
I2 = 1m
I1 = 0

I2
200m

U1
SSM3K37CT
W1
+

VDD

I1

W
IOFF = 1mA
ION = 0uA

16

0

Simulation Result
VDD=16V, ID=0.2A,
VGS=4V
Qgs
nC
Qgd
nC
Qg
nC

Measurement
0.060
0.088
0.440

Simulation

%Error

0.062
0.087
0.323

3.70
-1.51
-26.69

7

Gate Charge Characteristics

Reference

8

Capacitance Characteristics

Measurement
Simulation

Simulation Result
VDS (V)
0.1
0.2
0.5
1
2
5
10
20

Cbd (pF)
Measurement
Simulation
6.000
5.985
5.300
5.333
4.200
4.169
3.200
3.220
2.400
2.375
1.500
1.517
1.050
1.060
0.750
0.735

%Error
-0.25
0.62
-0.74
0.63
-1.04
1.13
0.95
-2.00

9

Switching Time Characteristics
14V

12V

10V

8V

6V

4V

2V

0V
0.92us
0.96us
V(U1:G)*4
V(U1:D)

1.00us

1.04us

1.08us

1.12us

Time

Evaluation circuit

L2
30nH

R1

V1 = 0
V2 = 5
TD = 1u
TR = 5n
TF = 5n
PW = 10u
PER = 20u

30nH

98

L1

50

RL

U1
SSM3K37CT

VDD
10Vdc

V2
R2
50

0

Simulation Result
ID=0.1A, VDD=10V
VGS=2.5/0V
ton

ns

Measurement
18.000

Simulation

%Error

18.131

0.73

10

Output Characteristics
500mA

10

4.5

400mA

2.5

300mA

1.8
200mA

1.5
VGS=1.2V

100mA

0A
0V

0.2V

0.4V

0.6V

0.8V

1.0V

I(V3)
V_V2

Evaluation circuit
V3

0Vdc

V2
U1
SSM3K37CT
V1

1

0

0

11

Forward Current Characteristics
1.0A

100mA

10mA

1.0mA

100uA
0V

-0.2V
I(Vsense)

-0.4V

-0.6V

-0.8V

-1.0V

-1.2V

-1.4V

V_VDS

Evaluation Circuit
Vsense

0Vdc
VDS

U1
SSM3K37CT

0

12

Comparison Graph
1000

Drian reverse current IDR (mA)

Measurement

Simulation

100

10

1

0.1
0

0.5

1

1.5

Drain - source voltage-VDS (V)

Simulation Result
IDR(mA)
0.1
1
10
20
50
100
200
400

-VDS(V)
Measurement
Simulation
0.570
0.5705
0.648
0.6487
0.730
0.7310
0.760
0.7593
0.805
0.8041
0.845
0.8460
0.895
0.8947
0.950
0.9500

%Error
0.10
0.11
0.13
-0.09
-0.11
0.12
-0.03
0.00

13

Reverse Recovery Characteristics
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.88us
I(R1)

19.96us

20.04us

20.12us

20.20us

20.28us

Time

Evaluation Circuit
R1
50

V1 = -9.25v
V2 = 10.90v
TD = 30ns
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us

V1
U1
SSM3K37CT

0

Compare Measurement vs. Simulation
Measurement
trj

ns

12.800

Simulation

%Error

12.564

-1.84

14

Reverse Recovery Characteristics

Reference
Measurement

Trj = 12.80 (ns)
Trb = 14.40(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50

Example

Relation between trj and trb

15

ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V

2V
I(R1)

4V

6V

8V

10V

12V

14V

16V

18V

20V

V_V1

Evaluation Circuit

R1

0.001m

V1

0Vdc

U1
SSM3K37CT
R2
100MEG

0

16

Zener Voltage Characteristics

Reference

17

SPICE MODEL of SSM3K37CT (Standard+BDS Model) in SPICE PARK

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