This document provides a device modeling report for a SiC Schottky Barrier Diode with part number SCS220AE2 from manufacturer ROHM. It includes the diode model parameters, circuit configurations used to simulate the forward current, junction capacitance, and reverse characteristics of the diode, as well as comparison graphs and tables showing good agreement between the simulation results and manufacturer measurements.
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SPICE MODEL of SCS220AE2 (Professional Model) in SPICE PARK
1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS220AE2
MANUFACTURER: ROHM
REAMARK: POFESSIONAL MODEL
2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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R1
0.01m
V1
0Vdc
0
R2
100MEG
U1
SCS220AE2_P
NC
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit