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All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
1 
Device Modeling Report 
Bee Technologies Inc. 
COMPONENTS: SiC Schottky Barrier Diode 
PART NUMBER: SCS205KGHR 
MANUFACTURER: ROHM 
REMARK: Professional Model
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
2 
(2) (3) 
(1) 
Circuit Configuration 
DIODE MODEL PARAMETERS 
PSpice 
model 
parameter 
Model description 
IS Saturation Current 
N Emission Coefficient 
RS Series Resistance 
IKF High-injection Knee Current 
CJO Zero-bias Junction Capacitance 
M Junction Grading Coefficient 
VJ Junction Potential 
ISR Recombination Current Saturation Value 
BV Reverse Breakdown Voltage(a positive value) 
IBV Reverse Breakdown Current(a positive value) 
TT Transit Time 
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
3 
U1 
SCS205KGHR 
R1 
0.01m 
V1 
0Vdc 
0 
R2 
100MEG 
V _ V 1 
0V 0.5V 1.0V 1.5V 2.0V 2.5V 
I(R1) 
1.0mA 
10mA 
100mA 
1.0A 
10A 
100A 
Forward Current Characteristics 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
4 
Comparison Graph Circuit Simulation result 
Comparison table 
IF (A) VF (V) %Error Measurement Simulation 0.001 0.760 0.760 0.00 0.01 0.820 0.820 0.00 0.1 0.898 0.887 -1.22 1 1.030 1.020 -0.97 2 1.120 1.119 -0.09 5 1.360 1.388 2.06 10 1.800 1.813 0.72 18 2.500 2.480 -0.80
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
5 
V ( R ) 
10mV 100mV 1.0V 10V 100V 1.0KV 
I(V2)/(1200V/100u) 
10p 
100p 
1.0n 
0 
R 
V1 
TD = 0 
TF = 100ns 
PW = 100us 
PER = 10m 
V1 = 0 
TR = 100us 
V2 = 1200 
V2 
0Vdc 
R2 
100MEG 
U1 
SCS205KGHR 
Junction Capacitance Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
6 
Comparison Graph Circuit Simulation result 
Comparison table 
VR(V) Ct (pF) %Error Measurement Simulation 0.01 365.000 358.022 -1.91 0.1 350.000 346.700 -0.94 1 270.000 269.500 -0.19 2 225.000 221.000 -1.78 5 158.000 152.500 -3.48 10 113.000 108.500 -3.98 20 80.000 76.060 -4.93 50 51.000 48.660 -4.59 100 38.000 36.420 -4.16 200 29.000 28.830 -0.59 500 22.500 23.257 3.36 1000 21.000 21.230 1.10
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
7 
V _ V 1 
0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV 
I(R1) 
1.0nA 
10nA 
100nA 
1.0uA 
10uA 
100uA 
V1 
0Vdc 
R1 
100m 
0 
R2 
100G 
U1 
SCS205KGHR 
Reverse Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
8 
Comparison Graph Circuit Simulation result 
Comparison table 
IR (uA) VR (V) %Error Measurement Simulation 0.001 200.000 237.180 18.59 0.01 660.000 559.470 -15.23 0.1 960.000 860.590 -10.36 1 1130.000 1156.000 2.30 2.9 1200.000 1294.000 7.83

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SPICE MODEL of SCS205KGHR (Professional Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS205KGHR MANUFACTURER: ROHM REMARK: Professional Model
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 (2) (3) (1) Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 SCS205KGHR R1 0.01m V1 0Vdc 0 R2 100MEG V _ V 1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.760 0.760 0.00 0.01 0.820 0.820 0.00 0.1 0.898 0.887 -1.22 1 1.030 1.020 -0.97 2 1.120 1.119 -0.09 5 1.360 1.388 2.06 10 1.800 1.813 0.72 18 2.500 2.480 -0.80
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( R ) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/100u) 10p 100p 1.0n 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 100us V2 = 1200 V2 0Vdc R2 100MEG U1 SCS205KGHR Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) Ct (pF) %Error Measurement Simulation 0.01 365.000 358.022 -1.91 0.1 350.000 346.700 -0.94 1 270.000 269.500 -0.19 2 225.000 221.000 -1.78 5 158.000 152.500 -3.48 10 113.000 108.500 -3.98 20 80.000 76.060 -4.93 50 51.000 48.660 -4.59 100 38.000 36.420 -4.16 200 29.000 28.830 -0.59 500 22.500 23.257 3.36 1000 21.000 21.230 1.10
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA V1 0Vdc R1 100m 0 R2 100G U1 SCS205KGHR Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.001 200.000 237.180 18.59 0.01 660.000 559.470 -15.23 0.1 960.000 860.590 -10.36 1 1130.000 1156.000 2.30 2.9 1200.000 1294.000 7.83