SPICE MODEL of SCS205KG (Professional Model) in SPICE PARK

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SPICE MODEL of SCS205KG (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Technology

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS205KG
MANUFACTURER: ROHM
REAMARK: POFESSIONAL MODEL

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
R1
0.01m
V1
0
R2
100MEG
U1
SCS205KG_S
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.001 0.840 0.823 -2.02
0.01 0.890 0.886 -0.45
0.1 0.950 0.951 0.11
1 1.080 1.070 -0.93
2 1.140 1.154 1.20
5 1.370 1.373 0.22
10 1.700 1.718 1.06
20 2.400 2.389 -0.46

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 10us
V2 = 1200
V2
0Vdc U1
SCS205KG_P
R1
100MEG
V(N16650)
10mV 100mV 1.0V 10V 100V 1.0KV
I(V2)/(1200V/10us)
1.0p
10p
100p
1.0n
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph
Circuit Simulation result
Comparison table
VR(V)
CT (pF)
%Error
Measurement Simulation
0.01 370.000 368.000 -0.54
0.1 360.000 363.500 0.97
1 270.000 276.000 2.22
10 120.000 119.200 -0.67
20 85.000 87.000 2.35
50 57.000 56.600 -0.70
100 40.000 40.500 1.25
200 28.00 29.00 3.57

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
7
U1
SCS205KG_P
R2
100MEG
V1
0Vdc
R1
100m
0
V_V1
0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph
Circuit Simulation result
Comparison table
IR (uA)
VR (V)
%Error
Measurement Simulation
0.002 370 360.06 -2.69
0.005 570 592.00 3.86
0.01 670 685.80 2.36
0.02 780 763.30 -2.14
0.05 875 856.10 -2.16
0.1 950 923.20 -2.82
0.2 1010 989.00 -2.08
0.5 1080 1,075.00 -0.46
1 1130 1,140.00 0.88

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SPICE MODEL of SCS205KG (Professional Model) in SPICE PARK

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS205KG MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0 R2 100MEG U1 SCS205KG_S V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.840 0.823 -2.02 0.01 0.890 0.886 -0.45 0.1 0.950 0.951 0.11 1 1.080 1.070 -0.93 2 1.140 1.154 1.20 5 1.370 1.373 0.22 10 1.700 1.718 1.06 20 2.400 2.389 -0.46

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 1200 V2 0Vdc U1 SCS205KG_P R1 100MEG V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/10us) 1.0p 10p 100p 1.0n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 370.000 368.000 -0.54 0.1 360.000 363.500 0.97 1 270.000 276.000 2.22 10 120.000 119.200 -0.67 20 85.000 87.000 2.35 50 57.000 56.600 -0.70 100 40.000 40.500 1.25 200 28.00 29.00 3.57

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 U1 SCS205KG_P R2 100MEG V1 0Vdc R1 100m 0 V_V1 0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV I(R1) 1.0nA 10nA 100nA 1.0uA 10uA Reverse Characteristic Circuit Simulation result Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.002 370 360.06 -2.69 0.005 570 592.00 3.86 0.01 670 685.80 2.36 0.02 780 763.30 -2.14 0.05 875 856.10 -2.16 0.1 950 923.20 -2.82 0.2 1010 989.00 -2.08 0.5 1080 1,075.00 -0.46 1 1130 1,140.00 0.88

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