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All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
1 
Device Modeling Report 
Bee Technologies Inc. 
COMPONENTS: SiC Schottky Barrier Diode 
PART NUMBER: S6301 
MANUFACTURER: ROHM 
REMARK: Professional Model
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
2 
RB050L-60 
Circuit Configuration 
DIODE MODEL PARAMETERS 
PSpice 
model 
parameter 
Model description 
IS Saturation Current 
N Emission Coefficient 
RS Series Resistance 
IKF High-injection Knee Current 
CJO Zero-bias Junction Capacitance 
M Junction Grading Coefficient 
VJ Junction Potential 
ISR Recombination Current Saturation Value 
BV Reverse Breakdown Voltage(a positive value) 
IBV Reverse Breakdown Current(a positive value) 
TT Transit Time 
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
3 
R1 
0.01m 
V1 
0Vdc 
0 
U1 
S6301 
V _ V 1 
0V 0.5V 1.0V 1.5V 2.0V 2.5V 
I(R1) 
1.0mA 
10mA 
100mA 
1.0A 
10A 
100A 
Forward Current Characteristics 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
4 
Comparison Graph Circuit Simulation result 
Comparison table 
IF (A) VF (V) %Error Measurement Simulation 0.001 0.770 0.759 -1.43 0.01 0.825 0.819 -0.73 0.1 0.889 0.886 -0.34 1 1.020 1.020 0.00 2 1.115 1.119 0.36 5 1.380 1.389 0.65 10 1.800 1.817 0.94 18 2.500 2.487 -0.52
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
5 
V ( N 1 6 6 1 0 ) 
10mV 100mV 1.0V 10V 100V 1.0KV 
I(V2)/(1200V/10u) 
10p 
100p 
1.0n 
0 
V1 
TD = 0 
TF = 500ns 
PW = 100us 
PER = 500us 
V1 = 0 
TR = 10us 
V2 = 1200 
V2 
0Vdc 
U1 
S6301 
Junction Capacitance Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
6 
Comparison Graph Circuit Simulation result 
Comparison table 
VR(V) CT (pF) %Error Measurement Simulation 0.01 359.000 341.335 -4.92 0.1 352.000 347.872 -1.17 1 280.000 277.800 -0.79 10 118.000 114.400 -3.05 20 82.290 79.300 -3.63 50 52.070 50.000 -3.98 100 37.580 37.000 -1.54 200 29.000 29.200 0.69 500 23.000 23.300 1.30 1000 21.500 21.000 -2.33
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
7 
V _ V 1 
0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV 
I(R1) 
1.0nA 
10nA 
100nA 
1.0uA 
10uA 
100uA 
V1 
0Vdc 
R1 
100m 
0 
U1 
S6301 
Reverse Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
8 
Comparison Graph Circuit Simulation result 
Comparison table 
IR (uA) VR (V) %Error Measurement Simulation 0.001 200.000 202.540 1.270 0.010 650.000 550.230 -15.349 0.100 960.000 858.700 -10.552 1.000 1140.000 1115.000 -2.193 3.000 1200.000 1297.000 8.083

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SPICE MODEL of S6301 (Professional Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: S6301 MANUFACTURER: ROHM REMARK: Professional Model
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 RB050L-60 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 U1 S6301 V _ V 1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.770 0.759 -1.43 0.01 0.825 0.819 -0.73 0.1 0.889 0.886 -0.34 1 1.020 1.020 0.00 2 1.115 1.119 0.36 5 1.380 1.389 0.65 10 1.800 1.817 0.94 18 2.500 2.487 -0.52
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( N 1 6 6 1 0 ) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/10u) 10p 100p 1.0n 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 1200 V2 0Vdc U1 S6301 Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 359.000 341.335 -4.92 0.1 352.000 347.872 -1.17 1 280.000 277.800 -0.79 10 118.000 114.400 -3.05 20 82.290 79.300 -3.63 50 52.070 50.000 -3.98 100 37.580 37.000 -1.54 200 29.000 29.200 0.69 500 23.000 23.300 1.30 1000 21.500 21.000 -2.33
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA V1 0Vdc R1 100m 0 U1 S6301 Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.001 200.000 202.540 1.270 0.010 650.000 550.230 -15.349 0.100 960.000 858.700 -10.552 1.000 1140.000 1115.000 -2.193 3.000 1200.000 1297.000 8.083