This document summarizes the key components, parameters, and simulation results of a power MOSFET transistor model. It describes the MOSFET and body diode components, lists parameters for the Pspice models, and shows simulation results that match measurement data for characteristics like transconductance, capacitance, switching times, and reverse recovery.
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SPICE MODEL of 2SK3872-01L (Professional+BDP Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SK3872-01L
MANUFACTURER: Fuji Electric
REMARK: Body Diode (Professional)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 5.7 5.848 2.6
2 8 8.092 1.15
5 12.5 12.2 -2.4
10 16.6 16.442 -0.95
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
5. Vgs-Id Characteristic
Circuit Simulation result
100A
80A
60A
40A
20A
0A
0V 5V 10V
I(V2)
V_V1
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 10 Vd c
0
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6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 5.4 5.390 -0.185
2 5.57 5.532 -0.682
5 5.89 5.833 -0.968
10 6.22 6.188 -0.514
20 6.73 6.720 -0.149
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
7. Id-Rds(on) Characteristic
Circuit Simulation result
20A
10A
0A
0V 1.0V 2.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
V3
V1
10Vdc 10Vdc
0
Simulation Result
ID=20, VGS=10V Measurement Simulation Error (%)
R DS (on) 58 m 58 m 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
11. Output Characteristic
Circuit Simulation result
20A
7.0V
6.5V
10A
6.0V
VGS=5.5V
0A
0V 10V 20V
I(V2)
V_V3
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 10 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
12. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
10A
1.0A
100mA
10mA
0.50V 0.75V 1.00V
I(V2)
V_V3
Evaluation Circuit
R1
0.0 1m
V2
0V dc
V3
0V dc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
15. Reverse Recovery Characteristic Reference
Trj=488(ns)
Trb=244(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005