SPICE MODEL of 2SK3611-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: 2SK3611-01MR
MANUFACTURER: Fuji Electric
REMARK: Body Diode (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 3.900 4.000 2.564
2.000 5.800 5.600 -3.448
5.000 8.600 8.600 0.000
10.000 11.800 11.700 -0.847
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Vgs-Id Characteristic
Circuit Simulation result
55A
10A
1.0A
100mA
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(V2)
V_V1
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 25 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.200 4.570 4.695 2.735
0.500 4.800 4.824 0.500
1.000 4.980 4.972 -0.161
2.000 5.190 5.183 -0.135
5.000 5.590 5.613 0.411
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic
Circuit Simulation result
5.0A
2.5A
0A
0V 1.0V 2.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
V3
V1
10Vdc 25Vdc
0
Simulation Result
ID=5, VGS=10V Measurement Simulation Error (%)
R DS (on) 200 m 200 m 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Gate Charge Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0 10n 20n 30n 40n
V(W1:3)
Time*10ms
Evaluation circuit
V2
0Vdc
Dbreak
PER = 1000u D1
PW = 600u I2
TF = 10n W1
TR = 10n + 10Adc
TD = 0
I2 = 10m
-
I1 W
I1 = 0 IOFF = 1mA V1
ION = 0uA 125Vdc
0
Simulation Result
VDD=125V Measurement Simulation Error (%)
,ID=5A
Qgs 8.000 nC 8.099 nC 1.232
Qgd 5.000 nC 4.930 nC -1.408
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Capacitance Characteristic (Vds vs. Cbd)
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1.000 830.000 840.000 1.205
2.000 700.000 703.500 0.500
5.000 500.000 485.000 -3.000
10.000 340.000 325.000 -4.412
20.000 194.000 200.500 3.351
50.000 95.700 96.000 0.313
100.000 56.000 53.400 -4.643
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Switching Time Characteristic
Circuit Simulation result
12V
VDS =48 (V)
VGS = 10V
8V
4V
0V
5.000us 5.050us 5.100us
V(2) V(3)/4.8
Time
Evaluation circuit
L1 RL
3
V3 0.0 5uH 9.5
0V dc
VDD
48
L2 RG
2
0.0 3uH
10
V1 = 0 0
V1
V2 = 10
TD = 5u
TR = 6n
TF = 7n
PW = 5 u
PE R = 10 0u
0
0
Simulation Result
ID=5A, VDD=48V
Measurement Simulation Error(%)
VGS=0/10V
td (on) 12 ns 12.007 ns 0.06
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
10A
6.0V
5A
5.5V
VGS=5.0V
0A
0V 25V 50V
I(V2)
V_V3
Evaluation circuit
V2
0V dc
V3
V1
25 Vd c
10 .0Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
10A
1.0A
100mA
10mA
0V 0.5V 1.0V 1.4V
I(V2)
V_V3
Evaluation Circuit
R1
0.0 1m
V2
0V dc
V3
0V dc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.100 0.626 0.626 0.003
0.200 0.658 0.654 -0.608
0.500 0.690 0.690 0.009
1.000 0.716 0.716 0.042
2.000 0.742 0.744 0.270
5.000 0.786 0.786 -0.003
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
0.8us 1.2us 1.6us 2.0us 2.4us 2.8us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9 .4 } V1
V2 = {1 0.7 }
TD = 75 n
TR = 10 n
TF = 10 n
PW = 1 u
PE R = 10 u
0
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr=trj+trb 692 ns 692.445 ns 0.064
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15. Reverse Recovery Characteristic Reference
Trj=468(ns)
Trb=224(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005