SPICE MODEL of 2SD2623 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SD2623
MANUFACTURER: PANASONIC
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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2. SPICE MODEL
Q1
Q2SD2623
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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3. BJT SPICE Model Parameters
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
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4. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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5. Reverse DC Beta Characteristic (IE vs. hFE)
Measurement
Simulation
Emitter Current (A)
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6. Forward
Forward Early Voltage Characteristic
Collector current IC (A)
Collector-emitter voltage VCE (V)
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
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7. C-B Capacitance Characteristics
Measurement
Simulation
REVERSE VOLTAGE VR (V)
E-B Capacitance Characteristics
Measurement
Simulation
REVERSE VOLTAGE VR (V)
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8. Transistor hFE-IC Characteristics
Simulation result
600
480
360
240
120
0
10mA 100mA 1.0A
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation circuit
Q1
Q2SD2623 V1
2V
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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9. Comparison Graph
Simulation result
600
Measurement
Simulation
480
Forward current transf er ratio hFE
360
240
120
0
10 100 1000
COLLECTOR CURRENT IC (mA)
Comparison table
hFE
IC (mA) %Error
Measurement Simulation
10 354.00 347.19 -1.92
20 365.00 366.22 0.33
50 379.00 385.23 1.64
100 387.00 391.37 1.13
200 383.00 384.03 0.27
300 373.00 369.07 -1.05
400 358.00 351.21 -1.90
500 337.00 331.86 -1.53
700 290.00 290.92 0.32
1000 220.00 227.55 3.43
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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10. VCE(Sat)-IC Characteristics
Simulation result
1.0V
100mV
10mV
1.0mV
100uA 1.0mA 10mA 100mA 1.0A
V(Q1:c)
IC(Q1)
Evaluation circuit
VC
Q1
Q2SD2623
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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11. Comparison Graph
Simulation result
1
Measurement
Simulation
COLLECTOR−EMITTE R SATURATION
VOLTAGE, VCE (sat) (V)
0.1
0.01
0.001
0.1 1 10 100 1000
COLLECTOR CURRENT IC (mA)
Comparison table
VCE(sat) (V)
IC (mA) %Error
Measurement Simulation
0.1 0.0174 0.0174 0.00
0.2 0.0167 0.0165 -1.20
0.5 0.0161 0.0158 -1.86
1.0 0.01570 0.0155 -1.27
2.0 0.01540 0.01550 0.65
5.0 0.01570 0.01610 2.55
10 0.01700 0.01770 4.12
20 0.02000 0.02090 4.50
50 0.03000 0.03075 2.50
100 0.04800 0.04700 -2.08
200 0.07700 0.07880 2.34
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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12. VBE(Sat)-IC Characteristics
Simulation result
10V
1.0V
100mV
10mV
1.0uA 10uA 100uA 1.0mA 10mA 100mA
V(Q1:b)
IC(Q1)
Evaluation circuit
VC
Q1
Q2SD2623
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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13. Comparison Graph
Simulation result
10
Measurement
BASE−EMITTER SATURATION VOLTAGE
Simulation
1
VBE (sat) (V)
0.1
0.01
0.001 0.01 0.1 1 10 100
COLLECTOR CURRENT IC (mA)
Comparison table
VBE(sat) (V)
IC (mA) %Error
Measurement Simulation
0.001 0.440 0.434 -1.36
0.01 0.500 0.500 0.00
0.1 0.560 0.564 0.71
1.0 0.625 0.626 0.16
10.0 0.700 0.693 -1.00
100.0 0.800 0.809 1.13
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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14. Switching Characteristics
Simulation result
1.2V 12V
1 2
1.0V 10V
0.8V 8V
0.6V 6V
0.4V 4V
0.2V 2V
0V 0V
-0.2V -2V
>>
-0.4V -4V
0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
1 V(Q1:B) 2 V(Q1:C)
Time
Evaluation circuit
L1
2 1
50nH
Rin L2
in 1 2 Q1
Q2SD2623 RL
300 30nH
200
Rgen
V1 = 0 50
V2 = 5
TD = 1.01u VCC
TR = 150ns V1
TF = 150ns 10V
PW = 20us
PER = 50us
0
Comparison table
Parameter Measurement Simulation %Error
tr (ns) 42.000 42.284 0.68
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15. Output Characteristics
Simulation result
IB=4.0mA 3.5mA 2.5mA
3.0mA
800mA
2.0mA
600mA 1.5mA
1.0mA
400mA
0.5mA
200mA
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
IC(Q1)
V_V1
Evaluation circuit
V1
Q1
Q2SD2623
5Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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16. Output Characteristics Reference
Collector current IC (A)
Collector-emitter voltage VCE (V)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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