This document contains a transistor modeling report for a NEC 2SC4331-AZ(K) transistor. It includes: 1) A description of the PSpice model parameters for the transistor. 2) Graphs of various transistor characteristics like the reverse/forward early voltage, DC beta, capacitance, and more. 3) Circuit simulations and comparisons with measurement data for characteristics like hFE-IC, VCE(sat)-IC, switching times, and the output characteristic. The report provides a detailed characterization of the electrical behavior and performance of the transistor through measurements and PSpice simulations.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC4331-AZ(K)
MANUFACTURER: NEC
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1

2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
1.0
1.0mA 10mA 100mA 1.0A 10A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC4331-AZ-K
V1
I1
2Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
1000
100
hFE
10
1
0.001 0.010 0.100 1.000 10.000
IC(A)
Simulation Result
hFE
IC(A) Error(%)
Measurement Simulation
0.002 180.000 172.493 -4.171
0.005 205.000 202.727 -1.109
0.010 220.000 224.053 1.842
0.020 235.000 245.438 4.442
0.050 260.000 273.195 5.075
0.100 280.000 292.444 4.444
0.200 300.000 308.444 2.815
0.500 325.000 317.521 -2.301
1.000 310.000 306.763 -1.044
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mV
1.0mV
1.0mA 10mA 100mA 1.0A 10A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC4331-AZ-K
F1
F
I1 20
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.001 0.026 0.025 -3.85
0.002 0.024 0.023 -1.70
0.005 0.020 0.021 2.50
0.010 0.019 0.019 1.58
0.020 0.019 0.019 -2.63
0.050 0.020 0.019 -2.69
0.100 0.022 0.022 -1.36
0.200 0.028 0.028 -1.43
0.500 0.046 0.048 3.70
1.000 0.070 0.071 1.14
2.000 0.120 0.118 -1.67
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mV
1.0mV
1.0mA 10mA 100mA 1.0A 10A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC4331-AZ-K
F1
F
I1 20
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.001 0.550 0.555 0.91
0.002 0.570 0.576 1.05
0.005 0.600 0.602 0.33
0.010 0.620 0.623 0.48
0.020 0.630 0.644 2.22
0.050 0.655 0.673 2.75
0.100 0.680 0.696 2.35
0.200 0.705 0.722 2.41
0.500 0.745 0.764 2.55
1.000 0.785 0.807 2.80
2.000 0.850 0.868 2.12
5.000 1.000 1.007 0.70
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Switching Characteristics
Circuit simulation result
10V 80V
1 2
60V
5V 40V
20V
0V 0V
-20V
-5V -40V
-60V
>>
-10V -80V
0s 2us 4us 6us 8us 10us 12us 14us 16us 18us
1 V(R4:2) 2 V(Q1:c)
Time
Evaluation circuit
L1 RL
1 2
30nH 17
D1 R1
L2
25 VCC
1 2 D1N5817 Q1
V1 = 5 D2 R2 Q2SC4331-AZ-K
30n
V2 = -5
TD = 8u V1 50
TF = 100ns D1N5817 35
PW = 20us
PER = 500us
TR = 100ns
0
Simulation result
Measurement Simulation %Error
tf (ns) 400.000 405.969 1.492
tstg (ns) 150.000 1504.000 0.267
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Output Characteristics
Circuit Simulation Result
6.0A
5.0A
12mA
4.0A
10mA
8mA
3.0A
6mA
2.0A
4mA
1.0A
IB=2mA
0A
0V 1.0V 2.0V 3.0V 4.0V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC4331-AZ-K
V1
I1
4Vdc
2mAdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15