This document summarizes the simulation results and characteristics of the TOSHIBA 2SC4118-Y bipolar junction transistor. It includes SPICE model parameters, as well as graphs comparing measurement and simulation results for characteristics such as reverse and forward early voltage, hFE over current and voltage, switching times, and output characteristics under varying base currents. In total, it analyzes 15 different characteristics to validate the accuracy of the SPICE model for this transistor.

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Bee Technologies Inc.
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SC4118-Y
MANUFACTURER: TOSHIBA
Device Modeling Report

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BJT SPICE Model Parameters
PSpice model
parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC
Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS

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Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse
Reverse Early Voltage Characteristic

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Reverse DC Beta Characteristic (IE vs. hFE)
Emitter Current (A)
Measuremen
tSimulation

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Ic
Vce
VAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward
Forward Early Voltage Characteristic

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C-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
E-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
Measurement
Simulation
Measurement
Simulation

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V1
6V
I1
0
Q1
Q2SC4118-Y
IC(Q1)
1.0mA 10mA 100mA 1.0A
IC(Q1)/ IB(Q1)
1.0
10
100
1.0K
Transistor hFE-IC Characteristics
Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (mA)
hFE
%Error
Measurement Simulation
1 135.000 132.919 -1.54
2 143.000 141.286 -1.20
5 150.000 151.470 0.98
10 156.000 158.233 1.43
20 160.000 163.779 2.36
50 165.000 167.904 1.76
100 167.000 166.321 -0.41
200 155.000 155.850 0.55
500 99.000 98.684 -0.32
VCE=6V

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IC(Q1)
1.0mA 10mA 100mA 1.0A
V(Q1:c)
1.0mV
10mV
100mV
1.0V
VC
I1
0Adc
0
F1
F
10
Q1
Q2SC4118-Y
VCE(Sat)-IC Characteristics
Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (mA)
VCE(sat) (mV)
%Error
Measurement Simulation
1 50.000 49.138 -1.72
2 51.000 49.616 -2.71
5 52.000 51.270 -1.40
10 55.000 54.151 -1.54
20 60.000 60.000 0.00
50 78.000 77.694 -0.39
100 105.000 107.411 2.30
200 169.000 167.702 -0.77
IC/IB =10

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VC
I1
0
F1
F
10
Q1
Q2SC4118-Y
VBE(Sat)-IC Characteristics
Simulation result
IC(Q1)
1.0mA 10mA 100mA 1.0A
V(Q1:b)
10mV
100mV
1.0V
10V
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (mA)
VBE(sat) (mV)
%Error
Measurement Simulation
1 640.000 641.915 0.30
2 661.000 660.254 -0.11
5 692.000 685.094 -1.00
10 715.000 704.942 -1.41
20 742.000 726.563 -2.08
50 781.000 761.377 -2.51
100 818.000 797.939 -2.45
200 866.000 853.805 -1.41
500 998.000 1039.400 4.15
IC/IB =10

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Time
20us 22us 24us 26us 28us 30us
1 V(V1:+) 2 V(Q1:c)
-8.0V
-6.0V
-4.0V
-2.0V
0V
2.0V
4.0V
6.0V
8.0V
1
-40V
-30V
-20V
-10V
0V
10V
20V
30V
40V
2
>>
V1
TD = 5u
TF = 20ns
PW = 20us
PER = 2000us
V1 = 0
TR = 20ns
V2 = 3.04
R1
440
0
VCC
18
R2
1080
RL
180
L1
30nH
1 2
L2
30n
1 2 Q1
Q2SC4118-Y
D1
D1FS6
D2
D1FS6
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Comparison table
Test condition: VCC=18(V),RL=180(Ω), IB1= -IB2=5(mA)
Parameter Unit Measurement Simulation %Error
tf ns 36.000 35.922 -0.22
tstg us 1.480 1.4735 -0.44

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Switching Characteristics Reference

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V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V
IC(Q1)
0A
100mA
200mA
300mA
400mA
500mA
V1
0
I1
Q1
Q2SC4118-Y
Output Characteristics
Simulation result
Evaluation circuit
IB=0.1 mA
0.5 mA
1 mA
2 mA
3 mA
4 mA
6 mA

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Output Characteristics Reference