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BY
KRISHNAN.P
  2009507017
 Chemical Vapour Deposition (CVD) is a chemical
  process used to produce high purity, high performance
  solid materials.
 In a typical CVD process, the substrate is exposed to
  one or more volatile precursors which react and
  decompose on the substrate surface to produce the
  desired deposit.
 During this process, volatile by-products are also
  produced, which are removed by gas flow through the
  reaction chamber.
Transport of    Transport of
                                                   Chemical
 reactants by    reactants by    Adsorption
                                                 decomposition
    forced      diffusion from   of reactants
                                                   and other
convection to    the main gas    in the wafer
                                                    surface
      the       stream to the     (substrate)
                                                 reactions take
  deposition       substrate        surface.
                                                     place.
    region          surface.



                 Transport of
                by-products by                     Desorption
                    forced        Transport of        of by-
                  convection      by-products       products
                away from the     by diffusion      from the
                  deposition                         surface
                    region.
 CVD’s are classified into two types on the basis of
   Operating Pressure.
 1. Atmospheric Pressure CVD
2. Low Pressure CVD
 Plasma Enhanced CVD
 Photochemical Vapour Deposition
 Thermal CVD
CASE 1 : HIGH TEMPERATURE
This process is used to deposit Silicon and compound
films or hard metallurgical coatings like Titanium
Carbide and Titanium Nitride.
CASE 2 : LOW TEMPERATURE
Many insulating film layers such as Silicon dioxide need
to be deposited at low temperatures for effective
deposition.
 Aluminium oxide films are deposited by this method
  from aluminium trichloride, argon and oxygen gas
  mixtures at temperatures ranging from 800-1000
  degree Celsius
 The films have low chlorine content, which continue
  to decrease with increasing temperature.
 Analysis of the film growth rate on the substrates
  revealed that, the growth takes place only by diffusion
  from 800 to 950 degree Celsius and only by gas phase
  reaction at 1000 degree Celsius.
 Film thickness uniformity cannot be maintained.
 Large number of pinhole defects can occur.
 Wafer (Substrate) throughput is low due to low
  deposition rate.
 The deposits get contaminated very easily since it takes
  place at atmospheric pressure.
 Maintaining stochiometry is extremely difficult.
 The deposition of Silicon carbide thin film is
  performed using low pressure CVD of Dichlorosilane /
  Acetylene / Hydrogen reaction system.
 The Silicon carbide film deposited at three different
  temperatures has three different properties.
              1023 K            AMORPHOUS
              1073 K         MICROCRYSTALLINE
              1173 K            PREFERENTIALLY
                                   ORIENTED
 This technique permits either horizontal or vertical
  loading of the wafers into the furnace and
  accommodates a large number of wafers for processing.
 The process results in the deposition of compounds with
  excellent purity and uniformity.
 However the technique requires higher temperatures
  and the deposition rate is low.
 Plasma-enhanced chemical vapor deposition (PECVD)
  is a process used to deposit thin films from a gas state
  (vapor) to a solid state on a substrate.
 Chemical reactions are involved in the process, which
  occur after creation of a plasma of the reacting gases.
 The plasma is generally created by RF (AC) frequency
  or DC discharge between two electrodes, the space
  between which is filled with the reacting gases.
 The helping hand of the Plasma helps in increasing
  the film quality at low temperature and pressure.
 PECVD uses electrical energy which is transferred to
  the gas mixture.
 This transforms the gas mixture into reactive radicals,
  ions, neutral atoms and molecules, and other highly
  excited species.
 These atomic and molecular fragments interact with a
  substrate and, depending on the nature of these
  interactions, either etching or deposition processes
  occur at the substrate.
 Some of the desirable properties of PECVD films are
  good adhesion, low pinhole density and uniformity.
 REINBERG TYPE REACTOR (DIRECT):
 Reactants, by-products, substrates and plasma are in
  the same space.
 Capacitive-coupled Radio Frequency plasma.
 Rotating substrates are present.
 DOWNSTREAM REACTOR (INDIRECT):
 Plasma is generated in a separate chamber and is
  pumped into the deposition chamber.
 Allows better control of purity and film quality when
  compared to the Direct type.
 Al thin films are deposited via photochemical vapour
  deposition on catalytic layers of Ti, TiO2, and Pd, using
  dimethyl aluminum hydride.
 Deposition is carried out at low gas pressures to induce
  a surface reaction based on adsorption and subsequent
  decomposition of adsorbates.
 Of these three layers Ti is so effective as a catalyst that
  the Al films are thermally deposited even at a low
  substrate temperature of 60°C with a growth rate of 0.5
  nm/min.
 The UV light generated by a deuterium lamp helped
  increase the growth rates. On the other hand, Al could
  be deposited on TiO2 layers only under irradiation at a
  substrate temperature of 120°C It takes several minutes
  to cover the TiO2 surface with Al and initiate the Al
  film's growth.
 Here, the UV light inhibited the Al growth on the
  surface, whereas the films are deposited thermally.
 X-ray photoelectron spectroscopy showed the
  formation of a photolytic production of the
  adsorbate, which acts presumably as a center that
  inhibits further Al growth.
 In thermal CVD process, temperatures as high as 2000
  degree Celsius is needed to deposit the compounds.
 There are two basic types of reactors for thermal CVD.
1. Hot wall reactor
2. Cold wall reactor
A hot wall reactor is an isothermal surface into which
the substrates are placed. Since the whole chamber is
heated, precise temperature control can be achieved
by designing the furnace accordingly.
 A disadvantage of the hot wall configuration is that
  deposition occurs on the walls of the chamber as well
  as on the substrate.
 As a consequence, hot wall reactors must be frequently
  cleaned in order to reduce contamination of
  substrates.
 In a cold wall reactor, only the substrate is heated.
 The deposition takes place on the area of the highest
  temperature, since CVD reactions are generally
  endothermic.
 The deposition is only on the substrate in cold wall
  reactors, and therefore contamination of particles is
  reduced considerably.
 However, hot wall reactors have higher throughput
  since the designs can easily accommodate multiple
  wafer (substrate) configurations.
 Variable shaped surfaces, given reasonable access to
    the coating powders or gases, such as screw threads,
    blind holes or channels or recesses, can be coated
    evenly without build-up on edges.
   Versatile –any element or compound can be deposited.
   High Purity can be obtained.
   High Density – nearly 100% of theoretical value.
   Material Formation well below the melting point
   Economical in production, since many parts can be
    coated at the same time.
 CVD has applications across a wide range of industries
  such as:
 Coatings – Coatings for a variety of applications such as
  wear resistance, corrosion resistance, high temperature
  protection, erosion protection and combinations thereof.
 Semiconductors and related devices – Integrated circuits,
  sensors and optoelectronic devices
 Dense structural parts – CVD can be used to produce
  components that are difficult or uneconomical to produce
  using conventional fabrication techniques. Dense parts
  produced via CVD are generally thin walled and maybe
  deposited onto a mandrel or former.
 Optical Fibres – For telecommunications.
 Composites – Preforms can be infiltrated using CVD
  techniques to produce ceramic matrix composites such
  as carbon-carbon, carbon-silicon carbide and silicon
  carbide-silicon carbide composites. This process is
  sometimes called chemical vapour infiltration or CVI.
 Powder production – Production of novel powders and
  fibres
 Catalysts
 Nanomachines
Chemical vapour deposition

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Chemical vapour deposition

  • 2.  Chemical Vapour Deposition (CVD) is a chemical process used to produce high purity, high performance solid materials.  In a typical CVD process, the substrate is exposed to one or more volatile precursors which react and decompose on the substrate surface to produce the desired deposit.  During this process, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.
  • 3. Transport of Transport of Chemical reactants by reactants by Adsorption decomposition forced diffusion from of reactants and other convection to the main gas in the wafer surface the stream to the (substrate) reactions take deposition substrate surface. place. region surface. Transport of by-products by Desorption forced Transport of of by- convection by-products products away from the by diffusion from the deposition surface region.
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  • 5.  CVD’s are classified into two types on the basis of Operating Pressure. 1. Atmospheric Pressure CVD 2. Low Pressure CVD  Plasma Enhanced CVD  Photochemical Vapour Deposition  Thermal CVD
  • 6. CASE 1 : HIGH TEMPERATURE This process is used to deposit Silicon and compound films or hard metallurgical coatings like Titanium Carbide and Titanium Nitride. CASE 2 : LOW TEMPERATURE Many insulating film layers such as Silicon dioxide need to be deposited at low temperatures for effective deposition.
  • 7.  Aluminium oxide films are deposited by this method from aluminium trichloride, argon and oxygen gas mixtures at temperatures ranging from 800-1000 degree Celsius  The films have low chlorine content, which continue to decrease with increasing temperature.  Analysis of the film growth rate on the substrates revealed that, the growth takes place only by diffusion from 800 to 950 degree Celsius and only by gas phase reaction at 1000 degree Celsius.
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  • 9.  Film thickness uniformity cannot be maintained.  Large number of pinhole defects can occur.  Wafer (Substrate) throughput is low due to low deposition rate.  The deposits get contaminated very easily since it takes place at atmospheric pressure.  Maintaining stochiometry is extremely difficult.
  • 10.  The deposition of Silicon carbide thin film is performed using low pressure CVD of Dichlorosilane / Acetylene / Hydrogen reaction system.  The Silicon carbide film deposited at three different temperatures has three different properties. 1023 K AMORPHOUS 1073 K MICROCRYSTALLINE 1173 K PREFERENTIALLY ORIENTED
  • 11.  This technique permits either horizontal or vertical loading of the wafers into the furnace and accommodates a large number of wafers for processing.  The process results in the deposition of compounds with excellent purity and uniformity.  However the technique requires higher temperatures and the deposition rate is low.
  • 12.  Plasma-enhanced chemical vapor deposition (PECVD) is a process used to deposit thin films from a gas state (vapor) to a solid state on a substrate.  Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases.  The plasma is generally created by RF (AC) frequency or DC discharge between two electrodes, the space between which is filled with the reacting gases.  The helping hand of the Plasma helps in increasing the film quality at low temperature and pressure.
  • 13.  PECVD uses electrical energy which is transferred to the gas mixture.  This transforms the gas mixture into reactive radicals, ions, neutral atoms and molecules, and other highly excited species.  These atomic and molecular fragments interact with a substrate and, depending on the nature of these interactions, either etching or deposition processes occur at the substrate.  Some of the desirable properties of PECVD films are good adhesion, low pinhole density and uniformity.
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  • 15.  REINBERG TYPE REACTOR (DIRECT):  Reactants, by-products, substrates and plasma are in the same space.  Capacitive-coupled Radio Frequency plasma.  Rotating substrates are present.  DOWNSTREAM REACTOR (INDIRECT):  Plasma is generated in a separate chamber and is pumped into the deposition chamber.  Allows better control of purity and film quality when compared to the Direct type.
  • 16.  Al thin films are deposited via photochemical vapour deposition on catalytic layers of Ti, TiO2, and Pd, using dimethyl aluminum hydride.  Deposition is carried out at low gas pressures to induce a surface reaction based on adsorption and subsequent decomposition of adsorbates.  Of these three layers Ti is so effective as a catalyst that the Al films are thermally deposited even at a low substrate temperature of 60°C with a growth rate of 0.5 nm/min.
  • 17.  The UV light generated by a deuterium lamp helped increase the growth rates. On the other hand, Al could be deposited on TiO2 layers only under irradiation at a substrate temperature of 120°C It takes several minutes to cover the TiO2 surface with Al and initiate the Al film's growth.  Here, the UV light inhibited the Al growth on the surface, whereas the films are deposited thermally.  X-ray photoelectron spectroscopy showed the formation of a photolytic production of the adsorbate, which acts presumably as a center that inhibits further Al growth.
  • 18.  In thermal CVD process, temperatures as high as 2000 degree Celsius is needed to deposit the compounds.  There are two basic types of reactors for thermal CVD. 1. Hot wall reactor 2. Cold wall reactor A hot wall reactor is an isothermal surface into which the substrates are placed. Since the whole chamber is heated, precise temperature control can be achieved by designing the furnace accordingly.
  • 19.  A disadvantage of the hot wall configuration is that deposition occurs on the walls of the chamber as well as on the substrate.  As a consequence, hot wall reactors must be frequently cleaned in order to reduce contamination of substrates.  In a cold wall reactor, only the substrate is heated.  The deposition takes place on the area of the highest temperature, since CVD reactions are generally endothermic.
  • 20.  The deposition is only on the substrate in cold wall reactors, and therefore contamination of particles is reduced considerably.  However, hot wall reactors have higher throughput since the designs can easily accommodate multiple wafer (substrate) configurations.
  • 21.  Variable shaped surfaces, given reasonable access to the coating powders or gases, such as screw threads, blind holes or channels or recesses, can be coated evenly without build-up on edges.  Versatile –any element or compound can be deposited.  High Purity can be obtained.  High Density – nearly 100% of theoretical value.  Material Formation well below the melting point  Economical in production, since many parts can be coated at the same time.
  • 22.  CVD has applications across a wide range of industries such as:  Coatings – Coatings for a variety of applications such as wear resistance, corrosion resistance, high temperature protection, erosion protection and combinations thereof.  Semiconductors and related devices – Integrated circuits, sensors and optoelectronic devices  Dense structural parts – CVD can be used to produce components that are difficult or uneconomical to produce using conventional fabrication techniques. Dense parts produced via CVD are generally thin walled and maybe deposited onto a mandrel or former.
  • 23.  Optical Fibres – For telecommunications.  Composites – Preforms can be infiltrated using CVD techniques to produce ceramic matrix composites such as carbon-carbon, carbon-silicon carbide and silicon carbide-silicon carbide composites. This process is sometimes called chemical vapour infiltration or CVI.  Powder production – Production of novel powders and fibres  Catalysts  Nanomachines