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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D125

2N2222; 2N2222A
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04

1997 May 29
Philips Semiconductors

Product specification

NPN switching transistors

2N2222; 2N2222A

FEATURES

PINNING

• High current (max. 800 mA)

PIN

• Low voltage (max. 40 V).

DESCRIPTION

1

base

3

APPLICATIONS

emitter

2

collector, connected to case

• Linear amplification and switching.
DESCRIPTION

3

handbook, halfpage
1

2

NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.

2
3

MAM264

1

Fig.1 Simplified outline (TO-18) and symbol.

QUICK REFERENCE DATA
SYMBOL
VCBO

PARAMETER
collector-base voltage

CONDITIONS

MIN.

MAX.

UNIT

open emitter
−

60

V

−

75

V

2N2222

−

30

V

2N2222A

−

40

V

−

800

mA

Tamb ≤ 25 °C

−

500

mW

75

−

250

−

MHz

300

−

MHz

−

250

ns

2N2222
2N2222A
VCEO

collector-emitter voltage

open base

IC

collector current (DC)

Ptot

total power dissipation

hFE

DC current gain

IC = 10 mA; VCE = 10 V

fT

transition frequency

IC = 20 mA; VCE = 20 V; f = 100 MHz

2N2222
2N2222A
toff

turn-off time

1997 May 29

ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA

2
Philips Semiconductors

Product specification

NPN switching transistors

2N2222; 2N2222A

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO

PARAMETER
collector-base voltage

CONDITIONS

MIN.

MAX.

UNIT

open emitter

2N2222

V

−

75

V

2N2222

−

30

V

2N2222A

−

40

V

2N2222

−

5

V

2N2222A

VEBO

60

2N2222A
VCEO

−

−

6

V

collector-emitter voltage

emitter-base voltage

open base

open collector

IC

collector current (DC)

−

800

mA

ICM

peak collector current

−

800

mA

IBM

peak base current

−

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

−

500

mW

Tcase ≤ 25 °C

−

1.2

W

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

200

°C

Tamb

operating ambient temperature

−65

+150

°C

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Rth j-c

CONDITIONS

thermal resistance from junction to case

1997 May 29

in free air

VALUE

UNIT

3

350

K/W

146

K/W
Philips Semiconductors

Product specification

NPN switching transistors

2N2222; 2N2222A

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector cut-off current

ICBO

IE = 0; VCB = 50 V

−

10

nA

IE = 0; VCB = 50 V; Tamb = 150 °C

2N2222

−

10

µA

collector cut-off current

IEBO

emitter cut-off current

hFE

DC current gain

IE = 0; VCB = 60 V

−

10

nA

IE = 0; VCB = 60 V; Tamb = 150 °C

2N2222A

−

10

µA

IC = 0; VEB = 3 V

−

10

nA

35

−

50

−

IC = 10 mA; VCE = 10 V

75

−

IC = 150 mA; VCE = 1 V; note 1

50

−

IC = 150 mA; VCE = 10 V; note 1

100

300

35

−

2N2222

30

−

2N2222A

40

−

IC = 150 mA; IB = 15 mA; note 1

−

400

mV

IC = 500 mA; IB = 50 mA; note 1

−

1.6

V

IC = 150 mA; IB = 15 mA; note 1

−

300

mV

IC = 500 mA; IB = 50 mA; note 1

−

1

V

IC = 150 mA; IB = 15 mA; note 1

−

1.3

V

IC = 500 mA; IB = 50 mA; note 1

−

2.6

V

IC = 150 mA; IB = 15 mA; note 1

0.6

1.2

V

IC = 500 mA; IB = 50 mA; note 1

−

2

V

−

8

pF

−

25

pF

2N2222

250

−

MHz

2N2222A

hFE

IC = 0.1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V

300

−

MHz

−

4

dB

DC current gain

IC = 10 mA; VCE = 10 V; Tamb = −55 °C

2N2222A
hFE

VCEsat

DC current gain

collector-emitter saturation voltage
2N2222

VCEsat

collector-emitter saturation voltage
2N2222A

VBEsat

base-emitter saturation voltage
2N2222

VBEsat

IC = 500 mA; VCE = 10 V; note 1

base-emitter saturation voltage
2N2222A

Cc

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

Ce

emitter capacitance

IC = ic = 0; VEB = 500 mV; f = 1 MHz

2N2222A
fT

F

transition frequency

noise figure
2N2222A

1997 May 29

IC = 20 mA; VCE = 20 V; f = 100 MHz

IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz

4
Philips Semiconductors

Product specification

NPN switching transistors

SYMBOL

2N2222; 2N2222A

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Switching times (between 10% and 90% levels); see Fig.2
ton

turn-on time

ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA −

35

ns

td

delay time

−

10

ns

tr

rise time

−

25

ns

toff

turn-off time

−

250

ns

ts

storage time

−

200

ns

tf

fall time

−

60

ns

Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

VBB

ndbook, full pagewidth

VCC

RB

RC
Vo

(probe)
oscilloscope
450 Ω

(probe)
450 Ω

R2

Vi

DUT
R1
MLB826

Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope input impedance Zi = 50 Ω.

Fig.2 Test circuit for switching times.

1997 May 29

5

oscilloscope
Philips Semiconductors

Product specification

NPN switching transistors

2N2222; 2N2222A

PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads

SOT18/13

α

j

seating plane

B

w M A M B M

1

b

k

D1

2
3

a
D

A

A

0

5

L

10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT

A

a

b

D

D1

j

k

L

w

α

mm

5.31
4.74

2.54

0.47
0.41

5.45
5.30

4.70
4.55

1.03
0.94

1.1
0.9

15.0
12.7

0.40

45°

REFERENCES

OUTLINE
VERSION

IEC

JEDEC

SOT18/13

B11/C7 type 3

TO-18

1997 May 29

EIAJ

EUROPEAN
PROJECTION

ISSUE DATE
97-04-18

6
Philips Semiconductors

Product specification

NPN switching transistors

2N2222; 2N2222A

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 May 29

7
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Internet: http://www.semiconductors.philips.com

© Philips Electronics N.V. 1997

SCA54

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

117047/00/02/pp8

Date of release: 1997 May 29

Document order number:

9397 750 02161

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2N2222/2N222A Transistor data sheet

  • 1. DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29
  • 2. Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current (max. 800 mA) PIN • Low voltage (max. 40 V). DESCRIPTION 1 base 3 APPLICATIONS emitter 2 collector, connected to case • Linear amplification and switching. DESCRIPTION 3 handbook, halfpage 1 2 NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. 2 3 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter − 60 V − 75 V 2N2222 − 30 V 2N2222A − 40 V − 800 mA Tamb ≤ 25 °C − 500 mW 75 − 250 − MHz 300 − MHz − 250 ns 2N2222 2N2222A VCEO collector-emitter voltage open base IC collector current (DC) Ptot total power dissipation hFE DC current gain IC = 10 mA; VCE = 10 V fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 2N2222 2N2222A toff turn-off time 1997 May 29 ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA 2
  • 3. Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter 2N2222 V − 75 V 2N2222 − 30 V 2N2222A − 40 V 2N2222 − 5 V 2N2222A VEBO 60 2N2222A VCEO − − 6 V collector-emitter voltage emitter-base voltage open base open collector IC collector current (DC) − 800 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW Tcase ≤ 25 °C − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c CONDITIONS thermal resistance from junction to case 1997 May 29 in free air VALUE UNIT 3 350 K/W 146 K/W
  • 4. Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. MAX. UNIT collector cut-off current ICBO IE = 0; VCB = 50 V − 10 nA IE = 0; VCB = 50 V; Tamb = 150 °C 2N2222 − 10 µA collector cut-off current IEBO emitter cut-off current hFE DC current gain IE = 0; VCB = 60 V − 10 nA IE = 0; VCB = 60 V; Tamb = 150 °C 2N2222A − 10 µA IC = 0; VEB = 3 V − 10 nA 35 − 50 − IC = 10 mA; VCE = 10 V 75 − IC = 150 mA; VCE = 1 V; note 1 50 − IC = 150 mA; VCE = 10 V; note 1 100 300 35 − 2N2222 30 − 2N2222A 40 − IC = 150 mA; IB = 15 mA; note 1 − 400 mV IC = 500 mA; IB = 50 mA; note 1 − 1.6 V IC = 150 mA; IB = 15 mA; note 1 − 300 mV IC = 500 mA; IB = 50 mA; note 1 − 1 V IC = 150 mA; IB = 15 mA; note 1 − 1.3 V IC = 500 mA; IB = 50 mA; note 1 − 2.6 V IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V IC = 500 mA; IB = 50 mA; note 1 − 2 V − 8 pF − 25 pF 2N2222 250 − MHz 2N2222A hFE IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V 300 − MHz − 4 dB DC current gain IC = 10 mA; VCE = 10 V; Tamb = −55 °C 2N2222A hFE VCEsat DC current gain collector-emitter saturation voltage 2N2222 VCEsat collector-emitter saturation voltage 2N2222A VBEsat base-emitter saturation voltage 2N2222 VBEsat IC = 500 mA; VCE = 10 V; note 1 base-emitter saturation voltage 2N2222A Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz 2N2222A fT F transition frequency noise figure 2N2222A 1997 May 29 IC = 20 mA; VCE = 20 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 4
  • 5. Philips Semiconductors Product specification NPN switching transistors SYMBOL 2N2222; 2N2222A PARAMETER CONDITIONS MIN. MAX. UNIT Switching times (between 10% and 90% levels); see Fig.2 ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 35 ns td delay time − 10 ns tr rise time − 25 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VBB ndbook, full pagewidth VCC RB RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 May 29 5 oscilloscope
  • 6. Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT18/13 α j seating plane B w M A M B M 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A a b D D1 j k L w α mm 5.31 4.74 2.54 0.47 0.41 5.45 5.30 4.70 4.55 1.03 0.94 1.1 0.9 15.0 12.7 0.40 45° REFERENCES OUTLINE VERSION IEC JEDEC SOT18/13 B11/C7 type 3 TO-18 1997 May 29 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 6
  • 7. Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 May 29 7
  • 8. Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 May 29 Document order number: 9397 750 02161