GaN for semiconductor..

1. COMPOUND:
Gallium Nitride (GaN)

2. Abstract
Scope
General properties of gallium nitride
(GaN)
Characterization tools
Screen printing process of gallium
nitride (GaN)
IV and CV characteristics of gallium nitride (GaN)

5. To study the relationship between DC current
through an electronic device and the DC voltage
across its terminal using Gallium Nitride in I-V
Test.
To study the characterization semiconductor
material and structure parameters using Gallium
Nitride in C-V Test.

17. Monolithic Switchmode Power
Conversion
Broadband Performance of GaN HEMTs

20. Fig. 1. XRD pattern of synthesised GaN powder.

22. Fig. 2. SEM photographs of synthesised GaN material which consists of: (a)
hexagonal; (b) needle shaped crystals.

24. Fig. 3. Room temperature PL spectrum of synthesised GaN powder.

26. Fig. 4. Room temperature Raman spectrum of synthesised GaN powder

35. XRD and Raman spectroscopy were investigated to
provide a better understanding of the crystal structure of
gallium oxynitrides prepared by ammonolysis of oxide
precursors.

36. The comparison of gallium oxynitride
XRD pattern
Raman spectroscopy

37. The sensitive materials from gallium oxynitride
(GaON) were deposited by screen-printing technology
on alumina and sapphire substrates, resulting in layer
thicknesses of 10-20 mm.
As shown in Fig. 5 for gallium oxynitride (GaON) the
thick layers exhibit macroporosity allowing a good
diffusion of the gas into the sensitive layers.

38. Expected Device: Gas sensor
The result for gas sensing measurement of gallium
oxynitride is shown in Figure 6: Electrical responses
of a “GaON” sensor (25 m thick) to 250 ppm ethanol
at 220, 260, 320 and 380 ◦C in: (a) humid (50% RH)
and (b) dry (0% RH) synthetic air.

39. The sensor exhibits a strong signal towards ethanol
with a resistance decrease of approximately a
magnitude.
Additionaly to a short response time (t90<1min) the
signal recovery is complete after exposition to ethanol.
The sensor signal to CO is less strong. Still, the clean
slope, short response time (t90<2min) and complete
signal recovery encourages further studies.

40.  IV characteristics
 CV characteristics

43. Figure 1: XRD pattern of GaN powder prepared by
ammonolysis (900 ◦C, 16 h) of β-Ga2O3.
Figure 2: XRD pattern of GaON(a) powder prepared
by ammonolysis (600 ◦C, 72 h) of NiGa2O4.
Figure 3: XRD pattern of GaON(b) powder prepared by
ammonolysis (800 ◦C, 10 h) of a citrate method-derived
precursor.
GaN XRD pattern

44. Figure 4(a): Raman spectra obtained at room
temperature under excitation at 488 nm. Spectra were
vertically shifted for clarity.
Figure4 (b): Same as figure 4(a), expanded in the
region of GaN first-order Raman modes. Vertical lines
indicate the first-order Raman modes of hexagonal (h-
GaN) and cubic (c-GaN) phases of GaN.
Raman scattering for GaN

45. Figure 1: Home

46. Figure 3: Home

47. Figure 4: Home

48. Figure 5: Optical microscope photography of the
surface of a gallium oxynitride thick layer deposited by
screen-printing on sapphire substrate. Home

49. Figure 6: Home

50. Figure 7: Home

51. Figure 7: Home

52.  Homoepitaxy:
Is a kind of epitaxy (the deposition of a
crystalline overlayer on a crystalline
substrate, where the overlayer is in registry
with the substrate) performed with only one
material.

53.  Morphology:
The shape and size of particles making up the
object; direct relation between these
structures and material properties
(ductility, strength, reactivity, etc)

54.  Woven:
Is a cloth formed by weaving (is a method of
fabric production in which two distinct sets
of yarns or threads are interlaced at right
angles to form a fabric or cloth).

55.  mesh:
Mesh consists of semi-permeable barrier made
of connected strands of metal, fiber, or other
flexible/ductile material.

56.  stencil:
is a thin sheet of material, such as paper,
plastic, or metal, with letters or a design cut
from it, used to produce the letters or design
on an underlying surface by applying
pigment through the cut-out holes in the
material.

57. :
Crystallizing with high degree of stoichiometry,
most can be obtained as both n-type and p-
type. Many have high carrier mobilities and
direct energy gaps, making them useful for
optoelectronics.

58. :
Relative humidity is a term used to describe
the amount of water vapor in a mixture of air
and water vapor.