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Genesis of IGBT technology at Fuji
Fuji Electrical Device Technology (FDT) started the production as well as application of marketing
strategies for Insulated Gate Bipolar Transistors (IGBT) a few decades ago, and these IGBTs have been
placed in the market ever since then. Earlier several types of epitaxial form of wafer based upon lifetime
controlling technique were in use. In the IV th and V th Generations, Floating Zone (FZ) wafer types
were being used and they brought forth a renaissance like transitioning phase that changed the designing
style to contemporary one.
The role of FDT technology
The implementation of lifetime oriented controlling and management techniques led to the usage of
reduction in carrier transportation efficiency that persisted even during routine usage, while in the ON
stage. FDT was used at the initial stage on this issue by following high-level carrier injection. In dire
contrast to this; FZ technique was made use of relying upon FZ wafer dependent technique. FDT is a
form of technique pursuing fine-patterned surface as a technical precondition to enhance IGBT qualities.
As it is constructed out of a number of IGBT blocks, finer design pattern allowed low voltage to be
acquired for IGBT blocks.
How to prevent ‘latch up’?
It was a task of higher significance to produce an IGBT that could bring protection through gate control
as a most probable reality. For the prevention of ‘latching up’ due to which an over current could majorly
destroy the device, there were several techniques that were put to use:
a. Reduction of base-emitter resistance.
b. Optimization of the width of n ‘cushion’ layer and the concentration of impurities.
c. Implementation of a lifetime killer.

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